LANDMARK-BASED LOCATION BELIEF TRACKING
    1.
    发明申请
    LANDMARK-BASED LOCATION BELIEF TRACKING 审中-公开
    基于LANDMARK的位置直接跟踪

    公开(公告)号:WO2013166190A3

    公开(公告)日:2013-12-27

    申请号:PCT/US2013039121

    申请日:2013-05-01

    CPC classification number: G01C21/26 G01C21/3608 G01C21/3644

    Abstract: An utterance is received from a user specifying a location attribute and a landmark. A set of candidate locations is identified based on the specified location attribute, and a confidence score can be determined for each candidate location. A set of landmarks is identified based on the specified landmark, and confidence scores can be determined for the landmarks. An associated kernel model is generated for each landmark. Each kernel model is centered at the location of the associated landmark on a map, and the amplitude of the kernel model can be based on landmark attributes, landmark confidence scores, characteristics of the user, and the like. The candidate locations are ranked based on the amplitudes of overlapping kernel models at the candidate locations, and can also be ranked based on confidence scores associated with the candidate locations. The resulting candidate location is selected and presented to the user.

    Abstract translation: 从指定位置属性和地标的用户接收到话语。 基于指定的位置属性来识别一组候选位置,并且可以为每个候选位置确定可信度得分。 基于指定的地标识别一组地标,并且可以为地标确定置信度得分。 为每个地标生成相关的内核模型。 每个核心模型集中在地图上相关联的地标的位置,并且内核模型的幅度可以基于地标属性,地标置信度得分,用户特征等。 候选位置基于候选位置处的重叠核心模型的幅度进行排序,并且还可以基于与候选位置相关联的置信度得分进行排名。 所得到的候选位置被选择并呈现给用户。

    HETEROSTRUCTURE VARIABLE-SILICON-RICHNESS NITRIDE FOR MULTI-LEVEL STORAGE FLASH MEMORY DEVICE
    4.
    发明申请
    HETEROSTRUCTURE VARIABLE-SILICON-RICHNESS NITRIDE FOR MULTI-LEVEL STORAGE FLASH MEMORY DEVICE 审中-公开
    用于多级存储闪存存储器件的非结构化可变硅 - 氮化物

    公开(公告)号:WO2009079484A1

    公开(公告)日:2009-06-25

    申请号:PCT/US2008/086913

    申请日:2008-12-16

    Inventor: MA, Yi OGLE, Robert

    Abstract: Charge storage stacks containing hetero-structure variable silicon richness nitride for memory cells and methods for making the charge storage stacks are provided. The charge storage stack can contain a first insulating layer (212) on a semiconductor substrate; n charge storage layers (214, 216) comprising silicon-rich silicon nitride on the first insulating layer, wherein numbers of the charge storage layers increase from the bottom to the top and a k-value respectively the silicon richness of an n-1th charge storage layer is higher than a k-value respectively the silicon richness of an nth charge storage layer; n-1 dielectric layers (218) comprising substantially stoichiometric silicon nitride between each of the n charge storage layers; and a second insulating layer (220) on the nth charge storage layers. In this context, the k-value is a refrective index determined by an optical measurement.

    Abstract translation: 提供了包含用于存储单元的异质结构可变富硅氮化物的电荷存储堆,以及用于制造电荷存储堆的方法。 电荷存储堆可以包含半导体衬底上的第一绝缘层(212); n电荷存储层(214,216),其包括在第一绝缘层上的富硅氮化物,其中电荷存储层的数量从底部增加到顶部,k值分别为第n-1个电荷的硅丰富度 存储层分别高于第n电荷存储层的硅丰富度的k值; n-1介电层(218),其在所述n个电荷存储层中的每一个之间包含基本上化学计量的氮化硅; 和第n个电荷存储层上的第二绝缘层(220)。 在这种情况下,k值是由光学测量确定的反射指数。

    CERAMIC MEMBRANE MODULE
    6.
    发明申请
    CERAMIC MEMBRANE MODULE 审中-公开
    陶瓷膜模块

    公开(公告)号:WO03090911A8

    公开(公告)日:2004-04-01

    申请号:PCT/SG0300052

    申请日:2003-03-14

    Inventor: TAN YI MA YI

    CPC classification number: B01D53/22 B01D63/06 B01D63/061 B01D63/063

    Abstract: The present invention provides a membrane module for multiple single-tube ceramic membranes. The membrane module having a tubular housing, a first housing cover and a second housing cover, support bar, sealing discs, a plurality of single-tube ceramic membranes and a variety of seals and sealing means such as o-rings. The tubular housing has cover plates respectively coupled to opposing ends of the tubular housing. Typically, the cover plates are permanently attached to the tubular housing. The plurality of single-tube ceramic membranes are housed inside the tubular housing and are held securely and substantially parallel to the tubular housing by the cover plates and sealing discs. The first housing cover further comprises an inlet for fluid to be filtered to be pumped into the membrane module.

    Abstract translation: 本发明提供了一种用于多个单管陶瓷膜的膜组件。 膜组件具有管状壳体,第一壳体盖和第二壳体盖,支撑杆,密封盘,多个单管陶瓷膜以及各种密封件和诸如O形环的密封装置。 管状壳体具有分别联接到管状壳体的相对端部的盖板。 通常,盖板永久地附接到管状壳体。 多个单管陶瓷膜容纳在管状壳体的内部,并通过盖板和密封盘牢固地并且基本上平行于管状壳体保持。 第一壳体盖还包括用于待过滤的流体的入口以被泵送到膜组件中。

    LANDMARK-BASED LOCATION BELIEF TRACKING FOR VOICE CONTROLLED NAVIGATION SYSTEM
    7.
    发明申请
    LANDMARK-BASED LOCATION BELIEF TRACKING FOR VOICE CONTROLLED NAVIGATION SYSTEM 审中-公开
    基于LANDMARK的位置跟踪语音控制导航系统

    公开(公告)号:WO2013166190A2

    公开(公告)日:2013-11-07

    申请号:PCT/US2013/039121

    申请日:2013-05-01

    CPC classification number: G01C21/26 G01C21/3608 G01C21/3644

    Abstract: An utterance is received from a user specifying a location attribute and a landmark. A set of candidate locations is identified based on the specified location attribute, and a confidence score can be determined for each candidate location. A set of landmarks is identified based on the specified landmark, and confidence scores can be determined for the landmarks. An associated kernel model is generated for each landmark. Each kernel model is centered at the location of the associated landmark on a map, and the amplitude of the kernel model can be based on landmark attributes, landmark confidence scores, characteristics of the user, and the like. The candidate locations are ranked based on the amplitudes of overlapping kernel models at the candidate locations, and can also be ranked based on confidence scores associated with the candidate locations. A candidate location is selected and presented to the user based on the candidate location ranking.

    Abstract translation: 从指定位置属性和地标的用户接收到话语。 基于指定的位置属性来识别一组候选位置,并且可以针对每个候选位置确定可信度得分。 基于指定的地标识别一组地标,并且可以确定地标的置信度得分。 为每个地标生成相关的内核模型。 每个核心模型集中在地图上相关地标的位置,核心模型的幅度可以基于地标属性,地标置信度得分,用户特征等。 候选位置基于候选位置处的重叠核心模型的幅度进行排序,并且还可以基于与候选位置相关联的置信度得分进行排名。 基于候选位置排名,选择候选位置并呈现给用户。

    VAPOR DEPOSITION OF HAFNIUM SILICATE MATERIALS WITH TRIS(DIMETHYLAMIDO)SILANE
    8.
    发明申请
    VAPOR DEPOSITION OF HAFNIUM SILICATE MATERIALS WITH TRIS(DIMETHYLAMIDO)SILANE 审中-公开
    用三(三甲基硅烷)硅烷氧化硅酸盐材料的蒸气沉积

    公开(公告)号:WO2007030673A2

    公开(公告)日:2007-03-15

    申请号:PCT/US2006/034953

    申请日:2006-09-07

    CPC classification number: C23C16/308 C23C16/401 C23C16/56

    Abstract: In one embodiment, a method for forming a morphologically stable dielectric material is provided which includes exposing a substrate to a hafnium precursor, a silicon precursor and an oxidizing gas to form hafnium silicate material during a chemical vapor deposition (CVD) process and subsequently and optionally exposing the substrate to a post deposition anneal, a nitridation process and a thermal annealing process. In some examples, the hafnium and silicon precursors used during a metal-organic CVD (MOCVD) process are alkylamino compounds, such as tetrakis(diethylamido) hafnium (TDEAH) and tris(dimethylamido) silane (Tris-DMAS). In another embodiment, other metal precursors may be used to form a variety of metal silicates containing tantalum, titanium, aluminum, zirconium, lanthanum, or combinations thereof.

    Abstract translation: 在一个实施方案中,提供了一种用于形成形态稳定的电介质材料的方法,其包括在化学气相沉积(CVD)工艺期间将衬底暴露于铪前体,硅前体和氧化气体以形成硅酸铪材料,随后和任选地 将衬底暴露于后沉积退火,氮化工艺和热退火工艺。 在一些实例中,在金属 - 有机CVD(MOCVD)方法中使用的铪和硅前体是烷基氨基化合物,例如四(二乙基氨基)铪(TDEAH)和三(二甲基氨基)硅烷(Tris-DMAS)。 在另一个实施方案中,其它金属前体可用于形成含有钽,钛,铝,锆,镧或其组合的各种金属硅酸盐。

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