Abstract:
An utterance is received from a user specifying a location attribute and a landmark. A set of candidate locations is identified based on the specified location attribute, and a confidence score can be determined for each candidate location. A set of landmarks is identified based on the specified landmark, and confidence scores can be determined for the landmarks. An associated kernel model is generated for each landmark. Each kernel model is centered at the location of the associated landmark on a map, and the amplitude of the kernel model can be based on landmark attributes, landmark confidence scores, characteristics of the user, and the like. The candidate locations are ranked based on the amplitudes of overlapping kernel models at the candidate locations, and can also be ranked based on confidence scores associated with the candidate locations. The resulting candidate location is selected and presented to the user.
Abstract:
A memory element can include a first electrode; a second electrode; and a memory material programmable between different resistance states, the memory material disposed between the first electrode and the second electrode and comprising a solid electrolyte with at least one modifier element formed therein; wherein the first electrode is an anode electrode that includes an anode element that is ion conductible in the solid electrolyte, the anode element being different than the modifier element.
Abstract:
Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.
Abstract:
Charge storage stacks containing hetero-structure variable silicon richness nitride for memory cells and methods for making the charge storage stacks are provided. The charge storage stack can contain a first insulating layer (212) on a semiconductor substrate; n charge storage layers (214, 216) comprising silicon-rich silicon nitride on the first insulating layer, wherein numbers of the charge storage layers increase from the bottom to the top and a k-value respectively the silicon richness of an n-1th charge storage layer is higher than a k-value respectively the silicon richness of an nth charge storage layer; n-1 dielectric layers (218) comprising substantially stoichiometric silicon nitride between each of the n charge storage layers; and a second insulating layer (220) on the nth charge storage layers. In this context, the k-value is a refrective index determined by an optical measurement.
Abstract:
A hydrogen producing reactor is disclosed. The hydrogen producing reactor has a reaction chamber containing a catalyst bed adapted to produce reaction products containing hydrogen from a hydrogen-producing feedstock. The reaction chamber also includes a hydrogen-selective, hydrogen-permeable gas separation module adapted to receive the reaction products from the catalyst bed and to separate a product stream containing hydrogen from the reaction products. The gas separation module comprises a porous substrate, an intermediate layer located at the porous substrate, and a hydrogen-selective membrane overlying the intermediate layer. The intermediate layer comprises particles and a binder metal, where the binder metal is distributed through out the intermediate layer. A steam reforming process is also disclosed using the disclosed reactor.
Abstract:
The present invention provides a membrane module for multiple single-tube ceramic membranes. The membrane module having a tubular housing, a first housing cover and a second housing cover, support bar, sealing discs, a plurality of single-tube ceramic membranes and a variety of seals and sealing means such as o-rings. The tubular housing has cover plates respectively coupled to opposing ends of the tubular housing. Typically, the cover plates are permanently attached to the tubular housing. The plurality of single-tube ceramic membranes are housed inside the tubular housing and are held securely and substantially parallel to the tubular housing by the cover plates and sealing discs. The first housing cover further comprises an inlet for fluid to be filtered to be pumped into the membrane module.
Abstract:
An utterance is received from a user specifying a location attribute and a landmark. A set of candidate locations is identified based on the specified location attribute, and a confidence score can be determined for each candidate location. A set of landmarks is identified based on the specified landmark, and confidence scores can be determined for the landmarks. An associated kernel model is generated for each landmark. Each kernel model is centered at the location of the associated landmark on a map, and the amplitude of the kernel model can be based on landmark attributes, landmark confidence scores, characteristics of the user, and the like. The candidate locations are ranked based on the amplitudes of overlapping kernel models at the candidate locations, and can also be ranked based on confidence scores associated with the candidate locations. A candidate location is selected and presented to the user based on the candidate location ranking.
Abstract:
In one embodiment, a method for forming a morphologically stable dielectric material is provided which includes exposing a substrate to a hafnium precursor, a silicon precursor and an oxidizing gas to form hafnium silicate material during a chemical vapor deposition (CVD) process and subsequently and optionally exposing the substrate to a post deposition anneal, a nitridation process and a thermal annealing process. In some examples, the hafnium and silicon precursors used during a metal-organic CVD (MOCVD) process are alkylamino compounds, such as tetrakis(diethylamido) hafnium (TDEAH) and tris(dimethylamido) silane (Tris-DMAS). In another embodiment, other metal precursors may be used to form a variety of metal silicates containing tantalum, titanium, aluminum, zirconium, lanthanum, or combinations thereof.
Abstract:
A hydrogen producing reactor is disclosed. The hydrogen producing reactor has a reaction chamber containing a catalyst bed adapted to produce reaction products con-taining hydrogen from a hydrogen-producing feedstock. The reaction chamber also in-cludes a hydrogen-selective, hydrogen-permeable gas separation module adapted to re-ceive the reaction products from the catalyst bed and to separate a product stream con-taining hydrogen from the reaction products. The gas separation module comprises a porous substrate, an intermediate porous layer located at the porous substrate, and a hy-drogen-selective membrane overlying the intermediate layer. The intermediate porous layer comprises a powder having a Tamman temperature higher than the Tamman tem-perature of the porous substrate. A steam reforming process is also disclosed using the disclosed reactor.
Abstract:
A hydrogen producing reactor is disclosed. The hydrogen producing reactor has a reaction chamber containing a catalyst bed adapted to produce reaction products containing hydrogen from a hydrogen-producing feedstock. The reaction chamber also includes a hydrogen-selective, hydrogen-permeable gas separation module adapted to receive the reaction products from the catalyst bed and to separate a product stream containing hydrogen from the reaction products. The gas separation module comprises a porous substrate, an intermediate layer located at the porous substrate, and a hydrogen-selective membrane overlying the intermediate layer. The intermediate layer comprises particles and a binder metal, where the binder metal is distributed through out the intermediate layer. A steam reforming process is also disclosed using the disclosed reactor.