Invention Application
- Patent Title: HIGH-THROUGHPUT ION IMPLANTER
- Patent Title (中): 高强度离子植绒
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Application No.: PCT/US2012/063272Application Date: 2012-11-02
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Publication No.: WO2013067317A1Publication Date: 2013-05-10
- Inventor: WEAVER, William, T. , CARLSON, Charles, T. , OLSON, Joseph, C. , BUONODONO, James , SULLIVAN, Paul
- Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , WEAVER, William, T. , CARLSON, Charles, T. , OLSON, Joseph, C. , BUONODONO, James , SULLIVAN, Paul
- Applicant Address: 35 Dory Road Gloucester, MA 01930 US
- Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.,WEAVER, William, T.,CARLSON, Charles, T.,OLSON, Joseph, C.,BUONODONO, James,SULLIVAN, Paul
- Current Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.,WEAVER, William, T.,CARLSON, Charles, T.,OLSON, Joseph, C.,BUONODONO, James,SULLIVAN, Paul
- Current Assignee Address: 35 Dory Road Gloucester, MA 01930 US
- Agency: FABER, Scott, R.
- Priority: US13/662,110 20121026; US61/554,720 20111102
- Main IPC: H01J37/20
- IPC: H01J37/20 ; H01J37/302 ; H01J37/317
Abstract:
One embodiment of this ion implanter (100) includes an ion source (101) and a process chamber (102). This process chamber is connect- ed to the ion source and separated from the ion source by a plurali- ty of extraction electrodes (114). A carrier (201) holds multiple work- pieces (202). A mask loader (205) in the process chamber connects a mask (203) to the carrier. A transfer chamber (104) and load lock (105, 106) may be connected to the process chamber. The ion im- planter is configured to perform blanket and/or selective implantation of the workpieces.
Information query
