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    RF ELECTRON SOURCE FOR IONIZING GAS CLUSTERS
    2.
    发明申请
    RF ELECTRON SOURCE FOR IONIZING GAS CLUSTERS 审中-公开
    用于气化气体集束的射频电子源

    公开(公告)号：WO2009085954A2

    公开(公告)日：2009-07-09

    申请号：PCT/US2008087430

    申请日：2008-12-18

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  OLSON JOSEPH C ,  SCHEUER JAY T

    Inventor： OLSON JOSEPH C ,  SCHEUER JAY T

    IPC: H01J37/30 ,  H01L21/26

    CPC classification number: H01J27/18 ,  H01J27/026 ,  H01J37/08 ,  H01J37/30 ,  H01J37/31 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/0812 ,  H01J2237/31701

    Abstract: The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.

    Abstract translation: 本发明公开了一种具有非常低金属污染物的气体簇离子束（GCIB）的系统和方法。 气体簇离子束系统受到高金属污染的困扰，从而影响其在许多应用中的应用。 这种污染是由于使用热电离源引起的，这些热源能够施加污染物，并且由于其运行温度升高而对生命周期的影响也很小。 虽然较早的修改集中在尽可能多地将源极气体簇隔离，但本发明通过完全消除热离子源代表了显着的进步。 在优选实施例中，电感耦合等离子体和电离区取代现有技术的热离子源和离子发生器。 通过使用RF或微波频率电磁波，可以在没有灯丝的情况下产生等离子体，从而消除金属污染物的主要贡献者。

    IMPROVED HIGH TILT IMPLANT ANGLE PERFORMANCE USING IN-AXIS TILT
    3.
    发明申请
    IMPROVED HIGH TILT IMPLANT ANGLE PERFORMANCE USING IN-AXIS TILT 审中-公开
    使用轴内倾斜改进高倾斜角度角度

    公开(公告)号：WO2009085939A1

    公开(公告)日：2009-07-09

    申请号：PCT/US2008/087406

    申请日：2008-12-18

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  GUPTA, Atul ,  OLSON, Joseph, C.

    Inventor： GUPTA, Atul ,  OLSON, Joseph, C.

    IPC: H01L21/265 ,  H01J37/30 ,  H01J37/36

    CPC classification number: G21K5/10 ,  H01L21/68764

    Abstract: The present invention comprises a method for high tilt angle implantation, with angular precision not previously achievable. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. These beamlets typically display a higher degree of parallelism in one of these two dimensions. Thus, to minimize angular error, the workpiece is tilted about an axis substantially perpendicular to the dimension having the higher degree of parallelism. The workpiece is then implanted at a high tilt angle and rotated about a line orthogonal to the surface of the workpiece. This process can be repeated until the high tilt implantation has been performed in all required regions.

    Abstract translation: 本发明包括一种用于高倾斜角度植入的方法，其角度精度以前不能实现。 具有宽度和高度尺寸的离子束由多个单独的子束组成。 这些子束通常在这两个维度之一中显示更高程度的平行度。 因此，为了最小化角度误差，工件围绕基本垂直于具有较高平行度的尺寸的轴线倾斜。 然后以高倾斜角植入工件，并围绕与工件表面正交的线旋转。 可以重复该过程，直到在所有所需区域中执行高倾斜植入。

    TECHNIQUES FOR PROVIDING ION SOURCE FEED MATERIALS
    4.
    发明申请
    TECHNIQUES FOR PROVIDING ION SOURCE FEED MATERIALS 审中-公开
    提供离子源材料的技术

    公开(公告)号：WO2008088971A2

    公开(公告)日：2008-07-24

    申请号：PCT/US2008/050478

    申请日：2008-01-08

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  HATEM, Christopher, R. ,  CHANEY, Craig, R. ,  COBB, Eric, R. ,  OLSON, Joseph, C. ,  CAMPBELL, Chris

    Inventor： HATEM, Christopher, R. ,  CHANEY, Craig, R. ,  COBB, Eric, R. ,  OLSON, Joseph, C. ,  CAMPBELL, Chris

    IPC: H01J27/02 ,  H01J49/06

    CPC classification number: H01J27/02 ,  C23C14/246 ,  C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006

    Abstract: Techniques for providing ion source feed materials are disclosed. In one particular exemplary embodiment, the techniques may be realized as a container for supplying an ion source feed material. The container may comprise an internal cavity to be pre-filled with an ion source feed material. The container may also comprise an outer body configured to be removably loaded into a corresponding housing that is coupled to an ion source chamber via a nozzle assembly. The container may further comprise an outlet to seal in the pre-filled ion source feed material, the outlet being further configured to engage with the nozzle assembly to establish a flow path between the internal cavity and the ion source chamber. The container may be configured to be a disposable component.

    Abstract translation: 公开了提供离子源进料的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于提供离子源进料的容器。 容器可以包括预先填充有离子源进料的内部空腔。 容器还可以包括被配置为可移除地装载到经由喷嘴组件耦合到离子源室的相应壳体中的外主体。 容器还可以包括密封在预填充的离子源进料中的出口，该出口进一步构造成与喷嘴组件接合以在内腔和离子源室之间建立流动路径。 容器可以被配置为一次性部件。

    METHODS AND APPARATUS FOR BEAM DENSITY MEASUREMENT IN TWO DIMENSIONS
    6.
    发明申请
    METHODS AND APPARATUS FOR BEAM DENSITY MEASUREMENT IN TWO DIMENSIONS 审中-公开
    用于二维光束密度测量的方法和装置

    公开(公告)号：WO2008005137A2

    公开(公告)日：2008-01-10

    申请号：PCT/US2007/013350

    申请日：2007-06-06

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  GUPTA, Atul ,  OLSON, Joseph, C. ,  NORRIS, Gregg, A.

    Inventor： GUPTA, Atul ,  OLSON, Joseph, C. ,  NORRIS, Gregg, A.

    CPC classification number: H01J37/3171 ,  G01J1/04 ,  G01J1/0437 ,  G01J1/0448 ,  G01J1/4257 ,  G01J2001/4261 ,  H01J37/244 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/30472 ,  H01J2237/31703

    Abstract: A beam density measurement system includes a shield, a beam sensor, and an actuator. The beam sensor is positioned downstream from the shield in a direction of travel of a beam. The beam sensor is configured to sense an intensity of the beam, and the beam sensor has a long dimension and a short dimension. The actuator translates the shield relative to the beam sensor, wherein the shield blocks at least a portion of the beam from the beam sensor as the shield is translated relative to the beam sensor, and wherein measured values of the intensity associated with changes in a position of the shield relative to the beam sensor are representative of a beam density distribution of the beam in a first direction defined by the long dimension of the beam sensor.

    Abstract translation: 光束密度测量系统包括屏蔽，光束传感器和致动器。 光束传感器沿着光束的行进方向定位在屏蔽的下游。 光束传感器被配置为感测光束的强度，并且光束传感器具有长尺寸和短尺寸。 执行器相对于光束传感器平移屏蔽，其中当屏蔽件相对于光束传感器平移时，屏蔽件阻挡来自光束传感器的光束的至少一部分，并且其中与位置变化相关联的强度的测量值 屏蔽物相对于光束传感器的光束密度分布代表由光束传感器的长尺寸限定的第一方向上的光束的光束密度分布。

    ION IMPLANTER WITH VARIABLE SCAN FREQUENCY
    7.
    发明申请
    ION IMPLANTER WITH VARIABLE SCAN FREQUENCY 审中-公开
    具有可变扫描频率的离子植入物

    公开(公告)号：WO2007111991A2

    公开(公告)日：2007-10-04

    申请号：PCT/US2007/007224

    申请日：2007-03-23

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  OLSON, Joseph C. ,  EVANS, Morgan

    Inventor： OLSON, Joseph C. ,  EVANS, Morgan

    CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J37/1477 ,  H01J37/302 ,  H01J2237/0041 ,  H01J2237/30488 ,  H01L21/265

    Abstract: An ion implanter includes an ion beam generator configured to generate an ion beam, a scanner configured to scan the ion beam in at least one direction at a scan frequency, and a controller. The controller is configrured to control the scan frequency in response to an operating parameter of the ion implanter. The operating parameter is at least partially dependent on the energy of the ion beam. The scan frequency is greater than a scan frequency threshold if the energy is greater than an energy threshold, and the scan frequency is less than the scan frequency threshold if the energy is less than the energy threshold.

    Abstract translation: 离子注入机包括被配置为产生离子束的离子束发生器，配置成以扫描频率沿至少一个方向扫描离子束的扫描器和控制器。 控制器被配置为响应于离子注入机的操作参数来控制扫描频率。 操作参数至少部分取决于离子束的能量。 如果能量大于能量阈值，则扫描频率大于扫描频率阈值，如果能量小于能量阈值，则扫描频率小于扫描频率阈值。

    TECHNIQUES FOR ATOMIC LAYER DEPOSITION
    8.
    发明申请
    TECHNIQUES FOR ATOMIC LAYER DEPOSITION 审中-公开
    原子层沉积技术

    公开(公告)号：WO2010048161A2

    公开(公告)日：2010-04-29

    申请号：PCT/US2009061298

    申请日：2009-10-20

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  MURAKAWA SHIGEMI ,  SINGH VIKRAM ,  PAPASOULIOTIS GEORGE D ,  OLSON JOSEPH C ,  MURPHY PAUL J ,  DICKERSON GARY E

    Inventor： MURAKAWA SHIGEMI ,  SINGH VIKRAM ,  PAPASOULIOTIS GEORGE D ,  OLSON JOSEPH C ,  MURPHY PAUL J ,  DICKERSON GARY E

    IPC: H01L21/205

    CPC classification number: C23C16/45544

    Abstract: Techniques for atomic layer deposition (ALD) are disclosed, in one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.

    Abstract translation: 公开了用于原子层沉积（ALD）的技术。在一个特定的示例性实施例中，所述技术可以实现为用于ALD的系统，其包括处于堆叠构造的多个反应器，其中每个反应器包括用于保持目标晶片的晶片保持部分 ，气体组件，所述气体组件耦合到所述多个反应器并且被配置为向所述多个反应器中的至少一个提供至少一种气体，以及排气组件，其耦合到所述多个反应器并且被配置为从所述反应器中排出所述至少一种气体 多个反应器中的至少一个。 气体组件还可以包括阀组件，该阀组件耦合到第一气体入口，第二气体入口和第三气体入口中的每一个，其中阀组件构造成选择性地释放第一气体，第二气体， 和第三个气体。

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