Invention Application
- Patent Title: SILICON CARBIDE POWDER AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 碳化硅粉末及其制造方法
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Application No.: PCT/KR2013/000442Application Date: 2013-01-18
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Publication No.: WO2013109105A1Publication Date: 2013-07-25
- Inventor: KIM, Byung Sook , SHIN, Dong Geun , KIM, Bum Sup , HAN, Jung Eun
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: Seoul Square, 541, Namdaemunno 5-ga, Jung-gu Seoul 100-714 KR
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: Seoul Square, 541, Namdaemunno 5-ga, Jung-gu Seoul 100-714 KR
- Agency: SEO, Kyo Jun
- Priority: KR10-2012-0006950 20120120
- Main IPC: C01B31/36
- IPC: C01B31/36 ; B01J2/00
Abstract:
Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a β-type crystal phase and a grain size in a range of about 5㎛ to about 100㎛.
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