公开(公告)号：WO2012102539A3

公开(公告)日：2012-08-02

申请号：PCT/KR2012/000571

申请日：2012-01-20

Applicant: LG INNOTEK CO., LTD. ,  KIM, Moo Seong ,  JO, Yeong Deuk ,  SON, Chang Hyun ,  KIM, Bum Sup

Inventor： KIM, Moo Seong ,  JO, Yeong Deuk ,  SON, Chang Hyun ,  KIM, Bum Sup

IPC: H01L21/20

Abstract: A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide.

公开(公告)号：WO2013100456A1

公开(公告)日：2013-07-04

申请号：PCT/KR2012/010962

申请日：2012-12-14

Applicant: LG INNOTEK CO., LTD.

Inventor： KIM, Byung Sook ,  KIM, Bum Sup ,  MIN, Kyoung Seok ,  SHIN, Dong Geun ,  HA, Seo Yong ,  HAN, Jung Eun

IPC: C04B35/565 ,  C04B35/622 ,  C30B29/36 ,  C01B31/36

CPC classification number: C30B23/02 ,  C01B32/40 ,  C01B32/956 ,  C30B23/00 ,  C30B29/36 ,  H01L29/1608 ,  Y10T428/2982

Abstract: A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Abstract translation: 根据实施方案的碳化硅粉末包括浓度在约100ppm至约5000ppm范围内的氮。 根据实施例的制造碳化硅粉末的方法包括通过将包括硅的硅源与固体碳源或包含有机碳化合物的碳源混合来制备混合物; 加热混合物; 冷却混合物; 并向混合物中供给氮气。

公开(公告)号：WO2012169801A2

公开(公告)日：2012-12-13

申请号：PCT/KR2012/004499

申请日：2012-06-07

Applicant: LG INNOTEK CO., LTD. ,  SON, Chang Hyun ,  KIM, Bum Sup

Inventor： SON, Chang Hyun ,  KIM, Bum Sup

IPC: C30B23/00 ,  C30B29/36 ,  H01L21/205

CPC classification number: C30B23/002 ,  C30B23/00 ,  C30B23/06 ,  C30B29/36

Abstract: The present invention relates to an apparatus for fabricating ingot including a crucible to accommodate a material, a top cover enclosing the circumference of the temperature difference compensative part, and a heat insulator to be disposed on the top cover.

Abstract translation: 本发明涉及一种用于制造锭的装置，其包括用于容纳材料的坩埚，封闭温差补偿部分的圆周的顶盖以及设置在顶盖上的隔热件。

公开(公告)号：WO2012161524A3

公开(公告)日：2012-11-29

申请号：PCT/KR2012/004096

申请日：2012-05-24

Applicant: LG INNOTEK CO., LTD. ,  KIM, Bum Sup ,  SHIN, Dong Geun

Inventor： KIM, Bum Sup ,  SHIN, Dong Geun

IPC: C30B23/00 ,  C30B29/36 ,  B01D63/08 ,  H01L21/205

Abstract: Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, and a filter part to allow a specific component in the crucible to selectively pass through the filter part. The raw material includes silicon and carbon.

公开(公告)号：WO2012144872A2

公开(公告)日：2012-10-26

申请号：PCT/KR2012/003117

申请日：2012-04-23

Applicant: LG INNOTEK CO., LTD. ,  KIM, Bum Sup ,  SON, Chang Hyun

Inventor： KIM, Bum Sup ,  SON, Chang Hyun

IPC: C30B23/00 ,  C30B29/36 ,  C09J11/04 ,  C09J5/00 ,  H01L21/205

CPC classification number: C30B23/00 ,  C30B29/36

Abstract: Disclosed are an apparatus and a method for fabricating an ingot. The apparatus for fabricating an ingot includes a crucible receiving a raw material, a holder fixing a seed provided on the raw material, and an adhesive layer interposed between the holder and the seed while adhering to the seed. The adhesive layer includes a main adhesive layer adhering to the seed, and adhesion enhancing particles dispersed in the main adhesive layer. Meanwhile, the apparatus for fabricating an ingot includes a crucible receiving a raw material, and a seed holder fixing a seed on the raw material, in which a buffer layer is formed on the seed holder.

Abstract translation: 公开了一种用于制造锭的装置和方法。 用于制造锭的装置包括容纳原料的坩埚，固定设置在原料上的种子的保持器，以及粘附在种子上的夹持器和种子之间的粘合剂层。 粘合剂层包括附着于种子的主粘合剂层和分散在主粘合剂层中的粘合增强颗粒。 同时，用于制造锭的装置包括容纳原料的坩埚和将种子固定在原料上，在种子保持器上形成有缓冲层。

公开(公告)号：WO2013109105A1

公开(公告)日：2013-07-25

申请号：PCT/KR2013/000442

申请日：2013-01-18

Applicant: LG INNOTEK CO., LTD.

Inventor： KIM, Byung Sook ,  SHIN, Dong Geun ,  KIM, Bum Sup ,  HAN, Jung Eun

IPC: C01B31/36 ,  B01J2/00

CPC classification number: C30B25/20 ,  C01B32/956 ,  C01P2004/30 ,  C01P2004/32 ,  C01P2004/61 ,  C30B29/36 ,  Y10T428/2982

Abstract: Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a β-type crystal phase and a grain size in a range of about 5㎛ to about 100㎛.

Abstract translation: 公开了碳化硅粉末及其制备方法。 该方法包括通过混合硅（Si）源，碳（C）源和碳化硅（SiC）晶种形成混合物，并使该混合物反应。 碳化硅（SiC）粉末包括具有β型结晶相的碳化硅（SiC）晶粒，并且晶粒尺寸在约5至约100 a的范围内。

公开(公告)号：WO2013019027A2

公开(公告)日：2013-02-07

申请号：PCT/KR2012/005990

申请日：2012-07-26

Applicant: LG INNOTEK CO., LTD. ,  KIM, Bum Sup ,  SON, Chang Hyun

Inventor： KIM, Bum Sup ,  SON, Chang Hyun

IPC: C30B23/00 ,  C30B29/36 ,  H01L21/02

CPC classification number: C30B23/02 ,  C30B23/005 ,  C30B29/36 ,  C30B35/002

Abstract: Disclosed are an apparatus for fabricating an ingot and a method for fabricating the ingot. The apparatus comprises a crucible to receive a source material, and a guide member over the source material. The guide member comprises a source material feeding part.

Abstract translation: 公开了一种用于制造锭的装置和用于制造锭的方法。 该装置包括用于接收源材料的坩埚和源材料上的引导构件。 引导构件包括源材料供给部。

公开(公告)号：WO2013015630A3

公开(公告)日：2013-01-31

申请号：PCT/KR2012/005966

申请日：2012-07-26

Applicant: LG INNOTEK CO., LTD. ,  KIM, Bum Sup ,  MIN, Kyoung Seok

Inventor： KIM, Bum Sup ,  MIN, Kyoung Seok

IPC: C30B23/00 ,  C30B29/36 ,  C01B31/36

Abstract: A raw material for growing an ingot according to the embodiment comprises an agglomerate raw material in which fine particles are agglomerated, wherein the agglomerate raw material has a granular shape. A method for fabricating a raw material for growing an ingot according to the embodiment comprises the steps of: preparing an ultrahigh-purity powder; and granulating the ultrahigh-purity powder. A method for fabricating an ingot according to the embodiment comprises the steps of: preparing a raw material; filling the raw material in a crucible; and growing a single crystal from the raw material, wherein the raw material comprises an agglomerate raw material in which fine particles are agglomerated, and the agglomerate raw material has a granular shape.

公开(公告)号：WO2012157970A2

公开(公告)日：2012-11-22

申请号：PCT/KR2012/003886

申请日：2012-05-17

Applicant: LG INNOTEK CO., LTD. ,  SON, Chang Hyun ,  KIM, Bum Sup

Inventor： SON, Chang Hyun ,  KIM, Bum Sup

CPC classification number: C30B23/02 ,  C30B23/00 ,  C30B23/025 ,  C30B25/12 ,  Y10T29/49826

Abstract: Disclosed is an apparatus for attaching a seed. The apparatus for attaching the seed includes a holder fixing part to fix a seed holder; a pressing part to apply a pressure to the seed holder; and a seed fixing part provided under the seed holder to fix the seed.

Abstract translation: 公开了一种用于连接种子的装置。 用于安装种子的装置包括用于固定种子保持器的保持器固定部分; 压榨部，向种子保持器施加压力; 以及种子固定部分，设置在种子保持器下方以固定种子。

公开(公告)号：WO2012144851A2

公开(公告)日：2012-10-26

申请号：PCT/KR2012/003057

申请日：2012-04-20

Applicant: LG INNOTEK CO., LTD. ,  KIM, Bum Sup ,  SON, Chang Hyun

Inventor： KIM, Bum Sup ,  SON, Chang Hyun

IPC: C30B23/00 ,  C30B29/36 ,  H01L21/205

CPC classification number: C30B23/025 ,  C30B29/36

Abstract: Provided is an ingot fabricating apparatus, which includes a crucible and an upper cover. The crucible accommodates a source material. The upper cover is disposed over the source material. The upper cover includes a seed crystal fixing unit fixing a seed crystal, and a guide part guiding the seed crystal fixing unit.

Abstract translation: 提供一种锭制造装置，其包括坩埚和上盖。 坩埚容纳源材料。 上盖设置在源材料上。 上盖包括固定晶种的籽晶固定单元和引导晶种定影单元的引导部。