Invention Application
WO2013110533A1 SEMICONDUCTOR DEVICE WITH INTERNAL SUBSTRATE CONTACT AND METHOD OF PRODUCTION
审中-公开
具有内部基板接触的半导体器件和生产方法
- Patent Title: SEMICONDUCTOR DEVICE WITH INTERNAL SUBSTRATE CONTACT AND METHOD OF PRODUCTION
- Patent Title (中): 具有内部基板接触的半导体器件和生产方法
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Application No.: PCT/EP2013/050736Application Date: 2013-01-16
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Publication No.: WO2013110533A1Publication Date: 2013-08-01
- Inventor: KRAFT, Jochen , TEVA, Jordi , CASSIDY, Cathal , KOPPITSCH, Günther
- Applicant: AMS AG
- Applicant Address: Schloss Premstätten Tobelbader Str. 30 A-8141 Unterpremstätten AT
- Assignee: AMS AG
- Current Assignee: AMS AG
- Current Assignee Address: Schloss Premstätten Tobelbader Str. 30 A-8141 Unterpremstätten AT
- Agency: EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
- Priority: EP12152485.4 20120125
- Main IPC: H01L21/74
- IPC: H01L21/74 ; H01L21/768
Abstract:
The semiconductor device comprises a substrate (1) of semiconductor material, a contact hole (2) reaching from a surface (10) into the substrate, and a contact metalization (12) arranged in the contact hole, so that the contact metalization forms an internal substrate contact (4) on the semiconductor material at least in a bottom area (40) of the contact hole.
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