Invention Application
WO2014008110A1 COMPLIANT BIPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODES
审中-公开
合适的双极微型器件传输头与硅电极
- Patent Title: COMPLIANT BIPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODES
- Patent Title (中): 合适的双极微型器件传输头与硅电极
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Application No.: PCT/US2013/048364Application Date: 2013-06-27
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Publication No.: WO2014008110A1Publication Date: 2014-01-09
- Inventor: GOLDA, Dariusz , BIBL, Andreas
- Applicant: LUXVUE TECHNOLOGY CORPORATION
- Applicant Address: 1705 Wyatt Drive Santa Clara, CA 95054 US
- Assignee: LUXVUE TECHNOLOGY CORPORATION
- Current Assignee: LUXVUE TECHNOLOGY CORPORATION
- Current Assignee Address: 1705 Wyatt Drive Santa Clara, CA 95054 US
- Agency: VINCENT, Lester J. et al.
- Priority: US13/543,675 20120706; US13/543,680 20120706
- Main IPC: H01L21/677
- IPC: H01L21/677 ; B81C1/00
Abstract:
A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.
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