发明申请
WO2014011638A1 SEMICONDUCTOR DEVICE PACKAGES INCLUDING THERMALLY INSULATING MATERIALS AND METHODS OF MAKING AND USING SUCH SEMICONDUCTOR PACKAGES
审中-公开
包括热绝缘材料的半导体器件封装及其制造和使用这种半导体封装的方法
- 专利标题： SEMICONDUCTOR DEVICE PACKAGES INCLUDING THERMALLY INSULATING MATERIALS AND METHODS OF MAKING AND USING SUCH SEMICONDUCTOR PACKAGES
- 专利标题（中）： 包括热绝缘材料的半导体器件封装及其制造和使用这种半导体封装的方法
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申请号： PCT/US2013/049730申请日： 2013-07-09
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公开(公告)号： WO2014011638A1公开(公告)日： 2014-01-16
- 发明人: GROOTHUIS, Steven , LI, Jian , LUO, Shijian
- 申请人： MICRON TECHNOLOGY, INC.
- 申请人地址： Mail Stop 525 8000 South Federal Way Boise, Idaho 83716-9623 US
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： Mail Stop 525 8000 South Federal Way Boise, Idaho 83716-9623 US
- 代理机构： WATSON, James C. et al.
- 优先权： US13/547,296 20120712
- 主分类号： H01L23/373
- IPC分类号： H01L23/373 ; H01L23/12
摘要：
Semiconductor device packages comprise a first semiconductor device comprising a heat generating region located on at least one end thereof. A second semiconductor device is attached to the first semiconductor device. At least a portion of the heat generating region extends laterally beyond at least one corresponding end of the second semiconductor device. A thermally insulating material at least partially covers the end of the second semiconductor device. Methods of forming a semiconductor device packages comprise attaching a second semiconductor device to a first semiconductor device. The first semiconductor device comprises a heat generating region at an end thereof. At least a portion of the heat generating region extends laterally beyond an end of the second semiconductor device. The end of the second semiconductor device is at least partially covered with a thermally insulating material.
IPC分类:
