Invention Application
WO2014066152A1 METHODS AND DEVICES FOR MATCHING TRANSMISSION LINE CHARACTERISTICS USING STACKED METAL OXIDE SEMICONDUCTOR (MOS) TRANSISTORS
审中-公开
使用堆叠金属氧化物半导体（MOS）晶体管匹配传输线特性的方法和装置
- Patent Title: METHODS AND DEVICES FOR MATCHING TRANSMISSION LINE CHARACTERISTICS USING STACKED METAL OXIDE SEMICONDUCTOR (MOS) TRANSISTORS
- Patent Title (中): 使用堆叠金属氧化物半导体（MOS）晶体管匹配传输线特性的方法和装置
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Application No.: PCT/US2013/065592Application Date: 2013-10-18
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Publication No.: WO2014066152A1Publication Date: 2014-05-01
- Inventor: LI, Miao , ZHUANG, Jingcheng , HU, Yan , BAI, Xiaoliang , KANG, Jing
- Applicant: QUALCOMM INCORPORATED
- Applicant Address: Attn: International Ip Administration 5775 Morehouse Drive San Diego, California 92121-1714 US
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: Attn: International Ip Administration 5775 Morehouse Drive San Diego, California 92121-1714 US
- Agency: HOLDAWAY, Paul S.
- Priority: US13/658,778 20121023
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H03K19/0175
Abstract:
An output driver for electrostatic discharge (ESD) protection includes a first pair of stacked metal oxide semiconductor field-effect transistor (MOS) devices coupled between a power terminal and a first differential output terminal. The output driver also includes a second pair of stacked MOS devices coupled between a second differential output terminal and a ground terminal.
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