Invention Application
- Patent Title: NEAR-INFRARED LIGHT EMITTING DEVICE USING SEMICONDUCTOR NANOCRYSTALS
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Application No.: PCT/US2013/074087Application Date: 2013-12-10
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Publication No.: WO2014093322A9Publication Date: 2014-06-19
- Inventor: SUPRAN, Geoffrey, J.s. , SONG, Katherine, W. , HWANG, Gyuweon , CORREA, Raoul, Emile , SHIRASAKI, Yasuhiro , BAWENDI, Moungi, G. , BULOVIC, Vladimir , SCHERER, Jennifer
- Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Applicant Address: 77 Massachusetts Avenue Cambridge, MA 02139-4307 US
- Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee Address: 77 Massachusetts Avenue Cambridge, MA 02139-4307 US
- Agency: FOX, Harold H. et al.
- Priority: US61/735,344 20121210
- Main IPC: H01J1/62
- IPC: H01J1/62
Abstract:
A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 um. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core. Light-emitting devices can be used, for example, in displays (e.g., flat-panel displays), screens (e.g., computer screens), and other items that require illumination. The materials used for the devices can have an energy gap corresponding to near-infrared, visible, or near-ultraviolet light.
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