TWO STEP METHOD OF RAPID CURING A SEMICONDUCTOR POLYMER LAYER

Invention Application

WO2015042121A1 TWO STEP METHOD OF RAPID CURING A SEMICONDUCTOR POLYMER LAYER 审中-公开

Title translation: 快速固化半导体聚合物层的两步法

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Patent Title: TWO STEP METHOD OF RAPID CURING A SEMICONDUCTOR POLYMER LAYER
Patent Title (中): 快速固化半导体聚合物层的两步法
Application No.: PCT/US2014/056042

Application Date: 2014-09-17
Publication No.: WO2015042121A1

Publication Date: 2015-03-26
Inventor: ROGERS, William, Boyd , VAN DEN HOEK, Willibrordus Gerardus, Maria
Applicant: DECA TECHNOLOGIES INC.
Applicant Address: 7855 South River Parkway, Ste. 111 Tempe, AZ 85284 US
Assignee: DECA TECHNOLOGIES INC.
Current Assignee: DECA TECHNOLOGIES INC.
Current Assignee Address: 7855 South River Parkway, Ste. 111 Tempe, AZ 85284 US
Agency: BOOTH, Kenneth, C.
Priority: US14/029,557 20130917
Main IPC: H01L21/312
IPC: H01L21/312

TWO STEP METHOD OF RAPID CURING A SEMICONDUCTOR POLYMER LAYER

Abstract:

A semiconductor device and method of making the semiconductor device is described. A semiconductor die is provided. A polymer layer is formed over the semiconductor die. A via is formed in the polymer layer. The polymer layer is crosslinked in a first process. The polymer layer is thermally cured in a second process. The polymer layer can comprise polybenzoxazoles (PBO), polyimide, benzocyclobutene (BCB), or siloxane-based polymers. A surface of the polymer layer can be crosslinked by a UV bake to control a slope of the via during subsequent curing. The second process can further comprise thermally curing the polymer layer using conduction, convection, infrared, or microwave heating. The polymer layer can be thermally cured by increasing a temperature of the polymer at a rate greater than or equal to 10 degrees Celsius per minute, and can be completely cured in less than or equal to 60 minutes.

Abstract(Chinese):

描述制造半导体器件的半导体器件和方法。提供半导体管芯。聚合物层形成在半导体管芯上。在聚合物层中形成通孔。聚合物层在第一工艺中交联。聚合物层在第二工序中热固化。聚合物层可以包含聚苯并恶唑（PBO），聚酰亚胺，苯并环丁烯（BCB）或硅氧烷基聚合物。聚合物层的表面可以通过UV烘烤来交联，以在后续固化期间控制通孔的斜率。第二种方法还可以包括使用传导，对流，红外或微波加热来热固化聚合物层。聚合物层可以通过以大于或等于10摄氏度/分钟的速率增加聚合物的温度来热固化，并且可以在小于或等于60分钟内完全固化。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/312	......有机层，例如光刻胶（H01L21/3105、H01L21/32优先）