Invention Application
- Patent Title: AMINE PRECURSORS FOR DEPOSITING GRAPHENE
- Patent Title (中): 用于沉积石墨的胺前体
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Application No.: PCT/IB2014/064919Application Date: 2014-09-29
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Publication No.: WO2015049624A1Publication Date: 2015-04-09
- Inventor: SCHWAB, Matthias Georg , MÜLLEN, Klaus , SACHDEV, Hermann , ITO, Yoshikazu
- Applicant: BASF SE , BASF (CHINA) COMPANY LIMITED , MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.
- Applicant Address: 67056 Ludwigshafen DE
- Assignee: BASF SE,BASF (CHINA) COMPANY LIMITED,MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.
- Current Assignee: BASF SE,BASF (CHINA) COMPANY LIMITED,MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V.
- Current Assignee Address: 67056 Ludwigshafen DE
- Agency: BASF SE
- Priority: EP13187091.7 20131002
- Main IPC: C07C211/03
- IPC: C07C211/03 ; C07C211/08 ; C07C211/09 ; C23C16/36 ; C01B31/04
Abstract:
The present invention relates to the use of an amine precursor of formula I (X 1 -R 1 ) n -NH (3-n) (I) or its ammonium salts for depositing a graphene film having a nitrogen content of from 0 to 65% by weight on a substrate S1 by chemical vapor deposition (CVD), wherein R 1 is selected from (a) C 1 to C 10 alkanediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 , (b) alkenediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 , (c) alkynediyl, which may all optionally be interrupted by at least one of O, NH and NR 2 , (d) C 6 to C 20 aromatic divalent moiety, and (e) CO and CH 2 CO, X 1 is selected from H, OH, OR 2 , NH 2 , NHR 2 , or NR 2 2 , wherein two groups X 1 may together form a bivalent group X 2 being selected from a chemical bond, O, NH, or NR 2 , R 2 is selected from C 1 to C 10 alkyl and a C 6 to C 20 aromatic moiety which may optionally be substituted by one or more substituents X 1 , n is 1, 2, or 3.
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