Invention Application
WO2015050666A1 ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS AND TECHNIQUES FOR FABRICATING SAME
审中-公开
各向异性磁传感器（AMR）传感器及其制造方法
- Patent Title: ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS AND TECHNIQUES FOR FABRICATING SAME
- Patent Title (中): 各向异性磁传感器（AMR）传感器及其制造方法
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Application No.: PCT/US2014/053980Application Date: 2014-09-04
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Publication No.: WO2015050666A1Publication Date: 2015-04-09
- Inventor: DAVID, Paul, A. , TAYLOR, William, P. , CADUGAN, Bryan
- Applicant: ALLEGRO MICROSYSTEMS, LLC
- Applicant Address: 115 Northeast Cutoff Worcester, Massachusetts 01606 US
- Assignee: ALLEGRO MICROSYSTEMS, LLC
- Current Assignee: ALLEGRO MICROSYSTEMS, LLC
- Current Assignee Address: 115 Northeast Cutoff Worcester, Massachusetts 01606 US
- Agency: SCOTT, John, C. et al.
- Priority: US14/042,982 20131001
- Main IPC: G01R33/00
- IPC: G01R33/00 ; G01R33/09 ; H01L43/12
Abstract:
Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In some embodiments, AMR sensors (50) having barber pole structures (36a, 36b, 36c, 36d, 36e) disposed below corresponding AMR sensing elements (40) are provided. AMR sensors having segmented AMR sensing elements are also described. Fabrication techniques that can be used to fabricate such sensors are also described. Fabrication techniques are also described that can reduce the risk of contamination during AMR sensor fabrication.
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