A pattern from a patterning device (M) is applied to a substrate (W) by a lithographic apparatus (LA). The applied pattern includes product features and metrology targets (600, 604). The metrology targets include large targets (600a) which are for measuring overlay using X-ray scattering (metrology apparatus 104) and small targets (600b, 604) which are for measuring overlay by diffraction of visible radiation (metrology apparatus 102). Some of the smaller targets (604) are distributed at locations between the larger targets, while other small targets (600b) are placed at the same locations as a large target. By comparing values measured using a small target (600b) and large target (600a) at the same location, parameter values (704) measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes (SL) while the small targets are distributed within product areas (602, D).