公开(公告)号：WO2015172963A1

公开(公告)日：2015-11-19

申请号：PCT/EP2015/058238

申请日：2015-04-16

Applicant: ASML NETHERLANDS B.V.

Inventor： QUINTANILHA, Richard ,  COENE, Willem, Marie, Julia, Marcel

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: A pattern from a patterning device (M) is applied to a substrate (W) by a lithographic apparatus (LA). The applied pattern includes product features and metrology targets (600, 604). The metrology targets include large targets (600a) which are for measuring overlay using X-ray scattering (metrology apparatus 104) and small targets (600b, 604) which are for measuring overlay by diffraction of visible radiation (metrology apparatus 102). Some of the smaller targets (604) are distributed at locations between the larger targets, while other small targets (600b) are placed at the same locations as a large target. By comparing values measured using a small target (600b) and large target (600a) at the same location, parameter values (704) measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes (SL) while the small targets are distributed within product areas (602, D).

Abstract translation: 来自图案形成装置（M）的图案通过光刻装置（LA）施加到基板（W）。 应用模式包括产品功能和度量目标（600,604）。 计量目标包括用于使用X射线散射（计量装置104）测量覆盖物的大目标（600a）和用于通过可见辐射的衍射测量覆盖物的测量小尺寸（600b，604）（计量装置102）。 一些较小的目标（604）分布在较大目标之间的位置，而其他小目标（600b）被放置在与大目标相同的位置处。 通过比较在相同位置使用小目标（600b）和大目标（600a）测量的值，可以校正使用所有小目标测量的参数值（704）以获得更好的精度。 大目标主要位于划线（SL）内，而小目标分布在产品区域（602，D）内。

公开(公告)号：WO2022069019A1

公开(公告)日：2022-04-07

申请号：PCT/EP2020/077217

申请日：2020-09-29

Applicant: CARL ZEISS SMT GMBH ,  ASML NETHERLANDS B.V.

Inventor： SCHMITT, Jan ,  QUINTANILHA, Richard ,  WEGE, Stephan

IPC: G03F1/34 ,  G02B5/18

Abstract: To produce a structured transmissive optical element, a blank (6) of trans- missive optical material is provided and coated with a chrome layer (7) which itself is coated with a hard mask layer (8). The chrome and hard mask layer coated blank (6) then is coated with a resist which is exposed to a structurized beam. The resist is developed and portions of the developed resist are removed according to the structurized exposition. The hard mask layer (8) is etched via the removed portions of the resist with a hard mask etching process gas which is oxygen-free and chlorine-free. Via such etch- ing, portions of the hard mask layer (8) are removed at positions which cor- respond to the positions of the removed portions of the resist. In a compa- rable manner, the chrome layer (7) is etched via a chrome etching process gas containing oxygen and/or chlorine. Again in a comparable manner, the blank (6) is etched via removed portions of the chrome layer (7) with an oxygen-free and chlorine-free blank etching process gas (13) to remove portions of the blank (6) at positions which correspond to the positions of the removed portions of the chrome layer (7). In a last step, the remaining hard mask and chrome layer portions (8, 7) are removed from the etched blank (6). With such method, a structured transmissive optical element having a well-defined pattern structure with high definition and resolution can be produced.

公开(公告)号：WO2019149477A1

公开(公告)日：2019-08-08

申请号：PCT/EP2019/050306

申请日：2019-01-08

Applicant: ASML NETHERLANDS B.V.

Inventor： KUMAR, Nitish ,  QUINTANILHA, Richard ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  TSIGUTKIN, Konstantin ,  COENE, Willem, Marie, Julia, Marcel

IPC: G03F7/20 ,  G03F1/22 ,  G03F1/24 ,  G03F1/60 ,  G03F1/84 ,  G02F1/37 ,  G01N21/956 ,  G21K1/06

Abstract: Disclosed is a method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method comprises performing the inspection using first inspection radiation obtained from a high harmonic generation source and having one or more first wavelengths within a first wavelength range of between 20nm and 150nm. Also disclosed is a method comprising performing (310) a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing (320) a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, said second wavelength range comprising wavelengths shorter than said first wavelength range.

公开(公告)号：WO2019011606A1

公开(公告)日：2019-01-17

申请号：PCT/EP2018/066428

申请日：2018-06-20

Applicant: ASML NETHERLANDS B.V.

Inventor： QUINTANILHA, Richard ,  KUMAR, Nitish ,  AKBULUT, Duygu

IPC: G03F9/00

Abstract: An inspection tool for inspecting a semiconductor substrate is described, the inspection tool comprising: - a substrate table configured to hold the substrate; - an electron beam source configured to project an electron beam onto an area of interest of the substrate; - a cathode-luminesce detector configured to detect cathodoluminescent light emitted from the area of interest; - a control unit configured to: - receive a signal representative of the detected cathodoluminescent light; - determine, based on the signal, a stress distribution of the area of interest.

公开(公告)号：WO2018233947A1

公开(公告)日：2018-12-27

申请号：PCT/EP2018/062778

申请日：2018-05-16

Applicant: ASML NETHERLANDS B.V.

Inventor： JAK, Martin Jacobus Johan ,  QUINTANILHA, Richard ,  DEN BOEF, Arie Jeffrey ,  KUBIS, Michael

IPC: G03F7/20

Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth / pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.

公开(公告)号：WO2019211061A1

公开(公告)日：2019-11-07

申请号：PCT/EP2019/058672

申请日：2019-04-05

Applicant: ASML NETHERLANDS B.V.

Inventor： QUINTANILHA, Richard ,  MIDDLEBROOKS, Scott, Anderson ,  KOOPMAN, Adrianus, Cornelis, Matheus ,  MANGNUS, Albertus, Victor, Gerardus

IPC: G03F7/20

Abstract: A method of determining a measurement sequence for an inspection tool inspecting a structure generated by a lithographic process performed by a lithographic system is presented, the method comprising: - deriving a model for the lithographic process as performed by the lithographic system, the model including a relationship between an set of system variables describing the lithographic system and an output variable representing the structure resulting of the lithographic process, - determining an observability of one or more system variables in the output variable, and; - determining the measurement sequence for the inspection tool, based on the observability.

公开(公告)号：WO2017025373A1

公开(公告)日：2017-02-16

申请号：PCT/EP2016/068317

申请日：2016-08-01

Applicant: ASML NETHERLANDS B.V.

Inventor： QUINTANILHA, Richard

IPC: G03F1/84 ,  G01N21/956 ,  G03F7/20 ,  G02B21/36 ,  G03F1/24 ,  G21K7/00

CPC classification number: G03F7/7065 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/95615 ,  G01N2201/06113 ,  G01N2201/12 ,  G02B21/365 ,  G02B21/367 ,  G03F1/24 ,  G03F1/84 ,  G21K7/00 ,  G21K2207/00 ,  G21K2207/005

Abstract: A product structure (407, 330') is formed with defects (360-366). A spot (S) of EUV radiation which is at least partially coherent is provided on the product structure (604) to capture at least one diffraction pattern (606) formed by the radiation after scattering by the product structure. Reference data (612) describes a nominal product structure. At least one synthetic image (616) of the product structure is calculated from the captured image data. Data from the synthetic image is compared with the reference data to identify defects (660-666) in the product structure. In one embodiment, a plurality of diffraction patterns are obtained using a series overlapping spots (S(l)-S(N)), and the synthetic image is calculated using the diffraction patterns and knowledge of the relative displacement. The EUV radiation may have wavelengths in the range 5 to 50 nm, close to dimensions of the structures of interest.

Abstract translation: 产品结构（407,330'）形成有缺陷（360-366）。 在产品结构（604）上提供至少部分相干的EUV辐射的点（S），以捕获由产品结构散射之后由辐射形成的至少一个衍射图案（606）。 参考数据（612）描述了标称产品结构。 从捕获的图像数据计算产品结构的至少一个合成图像（616）。 将合成图像的数据与参考数据进行比较，以识别产品结构中的缺陷（660-666）。 在一个实施例中，使用串联重叠点（S（1）-S（N））获得多个衍射图案，并且使用衍射图案和相对位移的知识来计算合成图像。 EUV辐射可以具有5至50nm范围内的波长，接近感兴趣结构的尺寸。

公开(公告)号：WO2016150957A1

公开(公告)日：2016-09-29

申请号：PCT/EP2016/056254

申请日：2016-03-22

Applicant: ASML NETHERLANDS B.V. ,  RWTH AACHEN UNIVERSITY

Inventor： QUINTANILHA, Richard ,  DANYLYUK, Serhiy

IPC: G03F7/20 ,  G01N21/95 ,  G01N21/956

CPC classification number: G01N21/956 ,  G01N21/8806 ,  G01N2021/95676 ,  G03F7/2004 ,  G03F7/70625 ,  G06K9/00

Abstract: A lithographic manufacturing system produces periodic structures with feature sizes less than 10 nm and a direction of periodicity (D). A beam of radiation (1904) having a range of wavelengths in the EUV spectrum (1-100 nm or 1-150 nm) is focused into a spot (S) of around (5) μm diameter. Reflected radiation (1908) is broken into a spectrum (1910) which is captured (1913) to obtain a target spectrum signal (ST). A reference spectrum is detected (1914) to obtain a reference spectrum signal (SR). Optionally a detector (1950) is provided to obtain a further spectrum signal (SF) using radiation diffracted at first order by the grating structure of the target. The angle of incidence (a) and azimuthal angle (φ) are adjustable. The signals (ST, SR, SF) obtained at one or more angles are used to calculate measured properties of the target, for example CD and overlay.

Abstract translation: 光刻制造系统产生特征尺寸小于10nm的周期性结构和周期性方向（D）。 将具有EUV光谱（1-100nm或1-150nm）中的波长范围的辐射束（1904）聚焦成大约（5）μm直径的光点（S）。 反射辐射（1908）被分解成被捕获的光谱（1910）（1913）以获得目标光谱信号（ST）。 检测参考光谱（1914）以获得参考光谱信号（SR）。 可选地，提供检测器（1950）以使用通过靶的光栅结构在第一阶段衍射的辐射来获得另外的光谱信号（SF）。 入射角（a）和方位角（φ）可调。 以一个或多个角度获得的信号（ST，SR，SF）用于计算目标的测量属性，例如CD和重叠。

公开(公告)号：WO2015086285A1

公开(公告)日：2015-06-18

申请号：PCT/EP2014/075170

申请日：2014-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： QUINTANILHA, Richard

IPC: G03F7/20

CPC classification number: G03F7/70516 ,  G01B11/06 ,  G01B11/14 ,  G03F7/70625

Abstract: A scatterometer is used to measure a property of structures on a substrate. A target grating comprises lines arranged periodically over an distance g p in a first direction, each line individually extending a distance gL in a second direction. The grating is illuminated with a spot of radiation and diffracted radiation is detected and used to calculate a measurement of CD, side wall angle and the like. The spot defines a field of view customized to the grating such that an extent f P of the spot in said first direction is greater than distance g p while an extent f L of the spot in said second direction is less than distance g L - The grating may be smaller than conventional gratings. The calculation can be simplified and made more robust, using a mathematical model that assumes that the grating is finite in the first direction but infinite in the second direction.

Abstract translation: 使用散射仪来测量衬底上结构的性质。 目标光栅包括在第一方向上周期性地在距离gp上布置的线，每条线在第二方向上单独地延伸一定距离gL。 光栅被辐射点照射，并且检测衍射辐射并用于计算CD，侧壁角度等的测量。 光点定义了对光栅定制的视场，使得所述第一方向上的光点的光程fP大于距离gp，而所述第二方向上的光点的距离fL小于距离gL。光栅可以更小 比常规光栅。 使用假设光栅在第一方向是有限的但在第二方向上是无限的数学模型，可以简化计算并使其变得更加鲁棒。

公开(公告)号：WO2019219314A1

公开(公告)日：2019-11-21

申请号：PCT/EP2019/059732

申请日：2019-04-16

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  PISARENCO, Maxim ,  QUINTANILHA, Richard

IPC: G03F7/20

Abstract: A method of calculating electromagnetic scattering properties of a structure represented as a nominal structure and a structural perturbation, the method comprising a step (1008) of numerically solving a volume integral equation comprising a nominal linear system to determine a nominal vector field being independent with respect to the structural perturbation; a step (1010) of using a perturbed linear system to determine an approximation of a vector field perturbation arising from the structural perturbation, by solving a volume integral equation or an adjoint linear system. Matrix-vector multiplication of a nominal linear system matrix convolution operator may be restricted to sub-matrices; and a step (1012) of calculating electromagnetic scattering properties of the structure using the determined nominal vector field and the determined approximation of the vector field perturbation.