Abstract:
A metrology apparatus for determining one or more parameters of a structure fabricated in or on a semiconductor substrate. The apparatus comprises a transducer array comprising a plurality of transducers positioned in a plane. The plurality of transducers comprises at least one transmitter transducer for emitting acoustic radiation in a frequency range from 1 GHz to 100 GHz towards the structure, and at least one receiver transducer for receiving acoustic radiation reflected and/or diffracted from the structure.
Abstract:
Disclosed is a metrology method and associated devices. The method comprises obtaining a first image, said first image being subject to one or more non-isoplanatic aberrations of an optical system used to capture said image; and non-iteratively correcting said first image for the effect of said one or more non-isoplanatic aberrations by performing one or both of: a field non-isoplanatic correction operation in field space for said first image, said field space corresponding to a field plane of the optical system; and a pupil non-isoplanatic correction operation in pupil space for said first image, said pupil space corresponding to a pupil plane of the optical system. Said one or more non-isoplanatic aberrations comprise a class of non-isoplanatic aberrations describable as a convolution combined with an object distortion and/or a pupil distortion.
Abstract:
Disclosed is a method of obtaining data describing an object structure. The method comprising the steps of: (a) illuminating the object structure with illuminating radiation; (b) modulating the phase of the illuminating radiation after scattering by the object structure, the modulation comprising applying a first phase factor dependent upon at least one controllable parameter and an aberration function having a form of a subadditive function of a vector norm; (c) capturing a plurality of intensity patterns, wherein each intensity pattern corresponds to a unique value of the at least one controllable parameter; and (d) reconstructing the data describing the object structure based on the plurality of intensity patterns. Also disclosed are corresponding inspection and lithographic apparatuses, a method of manufacturing devices and a computer program.
Abstract:
Disclosed is a method of correcting a holographic image, a processing device, a dark field digital holographic microscope, a metrology apparatus and an inspection apparatus. The method comprises obtaining the holographic image; determining at least one attenuation function due to motion blur from the holographic image; and correcting the holographic image or a portion thereof using the at least one attenuation function.
Abstract:
A pattern from a patterning device (M) is applied to a substrate (W) by a lithographic apparatus (LA). The applied pattern includes product features and metrology targets (600, 604). The metrology targets include large targets (600a) which are for measuring overlay using X-ray scattering (metrology apparatus 104) and small targets (600b, 604) which are for measuring overlay by diffraction of visible radiation (metrology apparatus 102). Some of the smaller targets (604) are distributed at locations between the larger targets, while other small targets (600b) are placed at the same locations as a large target. By comparing values measured using a small target (600b) and large target (600a) at the same location, parameter values (704) measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes (SL) while the small targets are distributed within product areas (602, D).
Abstract:
A dark field digital holographic microscope is disclosed which is configured to determine a characteristic of interest of a structure. The dark field digital holographic microscope comprises an illumination device configured to provide at least: a first beam pair comprising a first illumination beam of radiation (1010) and a first reference beam of radiation (1030) and a second beam pair comprising a second illumination beam of radiation (1020) and a second reference beam of radiation (1040); and one or more optical elements (1070) operable to capture a first scattered radiation and to capture a second scattered radiation scattered by the structure resultant from the first and second illumination beams respectively. The beams of the first beam pair are mutually coherent and the beams of the second beam pair are mutually coherent. The illumination device is configured to impose incoherence (ADI) between the first beam pair and second beam pair.
Abstract:
Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
Abstract:
A method including selecting a shaped feature from a set of shaped features, each shaped feature of the set of shaped features having a set of points on a perimeter of the shape of the shaped feature, creating a plurality of shape context descriptors for the selected shaped feature, wherein each shape context descriptor provides an indication of a location in a shape context descriptor framework of a first focus point of the set of points in relation to a second point of the set of points, and identifying a shaped feature from the set of shaped features having a same or similar shape as the selected shaped feature based on data from the plurality of shape context descriptors.
Abstract:
Target structures such as overlay gratings (Ta and Tb) are formed on a substrate (W) by a lithographic process. The first target is illuminated with a spot of first radiation (456a, Sa) and simultaneously the second target is illuminated with a spot of second radiation (456b, Sb). A sensor (418) detects at different locations, portions (460x-, 460x+) of said first radiation that have been diffracted in a first direction by features of the first target and portions (460y-, 460y+) of said second radiation that have been diffracted in a second direction by features of the second target. Asymmetry in X and Y directions can be detected simultaneously, reducing the time required for overlay measurements in X and Y. The two spots of radiation at soft x-ray wavelength can be generated simply by exciting two locations (710a, 710b) in a higher harmonic generation (HHG) radiation source or inverse Compton scattering source.
Abstract:
A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non- nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.