Invention Application
- Patent Title: SELF-ALIGNED NANOGAP FABRICATION
- Patent Title (中): 自对准NANOGAP制造
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Application No.: PCT/US2015/061491Application Date: 2015-11-19
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Publication No.: WO2016105708A1Publication Date: 2016-06-30
- Inventor: NAIK, Nisarga , ELIBOL, Oguz, H.
- Applicant: INTEL CORPORATION
- Applicant Address: 2200 Mission College Boulevard Santa Clara, CA 95054 US
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: 2200 Mission College Boulevard Santa Clara, CA 95054 US
- Agency: DAVE, Raj, S. et al.
- Priority: US14/583,368 20141226
- Main IPC: G01N33/487
- IPC: G01N33/487 ; G01N33/68 ; C12Q1/68 ; G01N27/26 ; G01N35/08 ; B01L3/00 ; B82Y35/00 ; B82Y40/00
Abstract:
Disclosed herein is a method comprising: depositing a second electrode of each of a plurality of electrode pairs onto a substrate, through an opening of one or more resist layers; depositing a strip of a sacrificial layer directly on the second electrode through the same opening of the one or more resist layer; depositing a first electrode of each of the plurality of electrode pairs directly on the strip of the sacrificial layer through the same opening of the one or more resist layer; and forming a nanogap channel by removing the strip of the sacrificial layer; wherein the strip of the sacrificial layer is sandwiched between and in direct contact with the first electrode and the second electrode before the strip is removed, and wherein at least a portion of the first electrode directly faces at least a portion of the second electrode.
Information query
