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公开(公告)号：WO2016105725A1
公开(公告)日：2016-06-30
申请号：PCT/US2015/061671
申请日：2015-11-19
Applicant: INTEL CORPORATION
Inventor： ELIBOL, Oguz, H. , NAIK, Nisarga
IPC: G01N33/487 , G01N27/26 , G01N33/68 , G01N35/08 , C12M1/34 , C12Q1/68 , B01L3/00 , B82Y5/00 , B82Y35/00 , B82Y40/00
CPC classification number: H05K3/10 , B01L3/502761 , B01L2200/0647 , B01L2200/0663 , B01L2300/0887 , B01L2400/0415 , B82Y15/00 , B82Y40/00 , C12Q1/6869 , G01N15/1031 , G01N33/48721 , G01N2015/1006 , C12Q2527/125 , C12Q2535/122 , C12Q2565/607 , C12Q2565/629 , C12Q2565/631
Abstract: Disclosed herein is a method comprising patterning a second electrode of each of a plurality of electrode pairs onto a substrate; patterning a strip of a sacrificial layer directly across the second electrode; patterning a first electrode of each of the plurality of electrode pairs directly on the strip of the sacrificial layer; forming a nanogap channel by removing the strip of the sacrificial layer; wherein the strip of the sacrificial layer is sandwiched between and in direct contact with the first electrode and the second electrode before the strip is removed, and wherein at least a portion of the first electrode directly faces at least a portion of the second electrode. The method may involve planarization (e.g., CMP). The electrode pairs may be configured such that a redox active molecule can only diffuse back and forth therebetween while it is in the portion of the nanogap channel sandwiched therebetween.
Abstract translation: 本文公开了一种方法，包括将多个电极对中的每一个的第二电极图案化到衬底上; 沿着第二电极直接图案化牺牲层条; 将所述多个电极对中的每一个的第一电极直接图案化在所述牺牲层的条上; 通过去除牺牲层的条形成纳米槽通道; 其中所述牺牲层的条带在所述带被去除之前夹在所述第一电极和所述第二电极之间并与之直接接触，并且其中所述第一电极的至少一部分直接面向所述第二电极的至少一部分。 该方法可以涉及平坦化（例如，CMP）。 电极对可以被配置为使得氧化还原活性分子只能在它们之间的纳米隙通道的部分中来回扩散。
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Patent Agency Ranking
公开(公告)号：WO2013100949A1
公开(公告)日：2013-07-04
申请号：PCT/US2011/067520
申请日：2011-12-28
Applicant: INTEL CORPORATION , CREDO, Grace, M. , ELIBOL, Oguz, H. , TAYEBI, Noureddine
Inventor： CREDO, Grace, M. , ELIBOL, Oguz, H. , TAYEBI, Noureddine
CPC classification number: G01N27/308 , B82Y15/00 , G01N27/26 , G01N27/3277 , G01N27/3278
Abstract: Embodiments of the invention provide transducers capable of functioning as electronic sensors and redox cycling sensors. Transducers comprise two electrodes separated by a nanogap. Molecular binding regions proximate to and within the nanogap are provided. Methods of fabricating nanogap transducers and arrays of nanogap transducers are also provided. Arrays of individually addressable nanogap transducers can be disposed on integrated circuit chips and operably coupled to the integrated circuit chip.
Abstract translation: 本发明的实施例提供能够用作电子传感器和氧化还原循环传感器的换能器。 传感器包括由纳米隙分开的两个电极。 提供了接近和在纳米隙内的分子结合区。 还提供了制造nanogap传感器和nanogap传感器阵列的方法。 可单独寻址的纳米波峰传感器的阵列可以被布置在集成电路芯片上并且可操作地耦合到集成电路芯片。
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公开(公告)号：WO2013089742A1
公开(公告)日：2013-06-20
申请号：PCT/US2011/065154
申请日：2011-12-15
Applicant: INTEL CORPORATION , ELIBOL, Oguz, H. , AKKAYA, Onur, C. , CREDO, Grace, M. , DANIELS, Jonathan, S. , TAYEBI, Noureddine
Inventor： ELIBOL, Oguz, H. , AKKAYA, Onur, C. , CREDO, Grace, M. , DANIELS, Jonathan, S. , TAYEBI, Noureddine
CPC classification number: G01N27/26 , B82Y15/00 , C12Q1/001 , C12Q1/6874 , G01N27/3278 , G01N33/5438 , C12Q2565/607
Abstract: Embodiments of the invention provide transducers capable of transducing redox active chemical signals into electrical signals. Transducers comprise two electrodes separated by a nanogap. At least one electrode is comprised of conducting diamond. Methods of fabricating nanogap transducers and arrays of nanogap transducers are provided. Arrays of individually addressable nanogap transducers can be disposed on integrated circuit chips and operably coupled to the integrated circuit chip.
Abstract translation: 本发明的实施例提供能够将氧化还原活性化学信号转换成电信号的换能器。 传感器包括由纳米隙分开的两个电极。 至少一个电极由导电金刚石构成。 提供制造纳米胶片换能器和纳米胶片换能器阵列的方法。 可单独寻址的纳米波峰传感器的阵列可以被布置在集成电路芯片上并且可操作地耦合到集成电路芯片。
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公开(公告)号：WO2016105715A1
公开(公告)日：2016-06-30
申请号：PCT/US2015/061601
申请日：2015-11-19
Applicant: INTEL CORPORATION
Inventor： GARDNER, Donald, S. , ELIBOL, Oguz, H.
CPC classification number: G01N27/308 , C12Q1/6869 , C23C16/02 , C23C16/325 , G01N27/3277 , G01N27/3278 , G01N27/48 , G01N27/49 , G01N33/5438 , H05K3/303 , H05K2203/06 , C12Q2527/125 , C12Q2535/122 , C12Q2565/607 , C12Q2565/629 , C12Q2565/631
Abstract: Disclosed herein is a device comprising an electrode pair comprising a first electrode and a second electrode; a nanogap channel; wherein a portion of the nanogap channel is sandwiched between the first electrode and the second electrode; wherein at least a portion of the first electrode directly faces at least a portion of the second electrode, across the nanogap channel; wherein the portion of the first electrode and the portion of the second electrode are exposed to an interior of the nanogap channel; and wherein the first electrode or the second electrode comprises doped diamond, silicon carbide or a combination thereof. Also disclosed herein is a method comprising forming on a carrier substrate a first material layer comprising doped diamond, silicon carbide or a combination thereof; bonding the first material layer onto an electrical circuit.
Abstract translation: 本文公开了一种包括电极对的装置，包括第一电极和第二电极; 纳米沟渠 其中所述纳米槽通道的一部分夹在所述第一电极和所述第二电极之间; 其中所述第一电极的至少一部分直接面对所述第二电极的至少一部分，穿过所述纳米槽通道; 其中所述第一电极的所述部分和所述第二电极的所述部分暴露于所述纳米隙通道的内部; 并且其中所述第一电极或所述第二电极包括掺杂的金刚石，碳化硅或其组合。 本文还公开了一种方法，包括在载体衬底上形成包含掺杂金刚石，碳化硅或其组合的第一材料层; 将第一材料层接合到电路上。
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公开(公告)号：WO2016105708A1
公开(公告)日：2016-06-30
申请号：PCT/US2015/061491
申请日：2015-11-19
Applicant: INTEL CORPORATION
Inventor： NAIK, Nisarga , ELIBOL, Oguz, H.
CPC classification number: B01L3/502707 , B01L3/502715 , B01L2200/025 , B01L2200/0663 , B01L2200/10 , B01L2200/12 , B01L2300/0645 , B01L2300/0816 , B01L2300/0838 , B01L2300/0887 , B01L2300/0896 , B01L2300/163 , C23C16/56 , G01N33/48721
Abstract: Disclosed herein is a method comprising: depositing a second electrode of each of a plurality of electrode pairs onto a substrate, through an opening of one or more resist layers; depositing a strip of a sacrificial layer directly on the second electrode through the same opening of the one or more resist layer; depositing a first electrode of each of the plurality of electrode pairs directly on the strip of the sacrificial layer through the same opening of the one or more resist layer; and forming a nanogap channel by removing the strip of the sacrificial layer; wherein the strip of the sacrificial layer is sandwiched between and in direct contact with the first electrode and the second electrode before the strip is removed, and wherein at least a portion of the first electrode directly faces at least a portion of the second electrode.
Abstract translation: 本文公开了一种方法，包括：通过一个或多个抗蚀剂层的开口，将多个电极对中的每一个的第二电极沉积到衬底上; 通过所述一个或多个抗蚀剂层的相同开口将牺牲层的条直接沉积在所述第二电极上; 通过所述一个或多个抗蚀剂层的相同开口，将所述多个电极对中的每一个的第一电极直接沉积在所述牺牲层的条上; 以及通过去除所述牺牲层的条形成纳米槽通道; 其中所述牺牲层的条带在所述带被去除之前夹在所述第一电极和所述第二电极之间并与之直接接触，并且其中所述第一电极的至少一部分直接面对所述第二电极的至少一部分。
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公开(公告)号：WO2012033666A2
公开(公告)日：2012-03-15
申请号：PCT/US2011/049605
申请日：2011-08-29
Applicant: INTEL CORPORATION , ELIBOL, Oguz, H. , DANIELS, Jonathan, S. , SMITHS, Sephane, L.
Inventor： ELIBOL, Oguz, H. , DANIELS, Jonathan, S. , SMITHS, Sephane, L.
CPC classification number: B01L3/502715 , B01L2200/0689 , B01L2300/0645 , B01L2300/0877 , B01L2300/14 , B01L2400/0487 , G01N27/283
Abstract: An electronic fluidic interface for use with an electronic sensing chip is provided. The electronic fluidic interface provides fluidic reagents to the surface of a sensor chip. The electronic sensing chip typically houses an array of electronic sensors capable of collecting data in a parallel manner. The electronic fluidic interface is used, for example, as part of a system that drives the chip and collects, stores, analyzes, and displays data from the chip and as part of a system for testing chips after manufacture. The electronic fluidic interface is useful, for example, nucleic sequencing applications.
Abstract translation: 提供了与电子传感芯片一起使用的电子流体接口。 电子流体接口向传感器芯片的表面提供流体试剂。 电子传感芯片通常容纳能够以并行方式收集数据的电子传感器阵列。 例如，电子流体接口用作驱动芯片并收集，存储，分析和显示芯片数据的系统的一部分，并作为用于在制造后测试芯片的系统的一部分。 电子流体界面是有用的，例如核酸测序应用。
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