Invention Application
WO2016201314A1 VAPOR DEPOSITION PROCESSES FOR FORMING SILICON- AND OXYGEN-CONTAINING THIN FILMS
审中-公开
用于形成含硅和含氧薄膜的蒸气沉积工艺
- Patent Title: VAPOR DEPOSITION PROCESSES FOR FORMING SILICON- AND OXYGEN-CONTAINING THIN FILMS
- Patent Title (中): 用于形成含硅和含氧薄膜的蒸气沉积工艺
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Application No.: PCT/US2016/037006Application Date: 2016-06-10
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Publication No.: WO2016201314A1Publication Date: 2016-12-15
- Inventor: GIRARD, Jean-Marc , ZHANG, Peng , SANCHEZ, Antonio , KHANDELWAL, Manish , ITOV, Gennadiy , PESARESI, Reno
- Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , AIR LIQUIDE ADVANCED MATERIALS, LLC , GIRARD, Jean-Marc , ZHANG, Peng , SANCHEZ, Antonio , KHANDELWAL, Manish , ITOV, Gennadiy , PESARESI, Reno
- Applicant Address: 75 Quai d'Orsay F-75007 Paris FR
- Assignee: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE,AIR LIQUIDE ADVANCED MATERIALS, LLC,GIRARD, Jean-Marc,ZHANG, Peng,SANCHEZ, Antonio,KHANDELWAL, Manish,ITOV, Gennadiy,PESARESI, Reno
- Current Assignee: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE,AIR LIQUIDE ADVANCED MATERIALS, LLC,GIRARD, Jean-Marc,ZHANG, Peng,SANCHEZ, Antonio,KHANDELWAL, Manish,ITOV, Gennadiy,PESARESI, Reno
- Current Assignee Address: 75 Quai d'Orsay F-75007 Paris FR
- Agency: MCQUEENEY, Patricia E. et al.
- Priority: US14/738,039 20150612; USPCT/US2016/025010 20160330
- Main IPC: C07F7/02
- IPC: C07F7/02 ; C01B21/088 ; C01B21/087 ; C23C16/50 ; C23C16/455
Abstract:
ALD processes for forming the silicon and oxygen containing films using mono-substituted TSA precursors are disclosed. The mono-substituted TSA precursors have the formula: (SiH 3 ) 2 N-SiH 2 -X, wherein X is a halogen atom or an amino group.
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