Abstract:
ALD processes for forming the silicon and oxygen containing films using mono-substituted TSA precursors are disclosed. The mono-substituted TSA precursors have the formula: (SiH 3 ) 2 N-SiH 2 -X, wherein X is a halogen atom or an amino group.
Abstract:
본 발명은 신규의 설포닐이미드 염화합물, 이를 포함하는 광산 발생제 및 감광성 수지 조성물에 관한 것으로, 보다 상세하게는 화학식 1로 표시되는 설포닐이미드 염화합물을 포함함으로써, 우수한 광감도 나타내어, 경화율을 현저히 향상시킬 수 있는 감광성 수지 조성물에 관한 것이다.
Abstract:
The present invention provides a process for producing hydrogen bis(fluorosulfonyl)- imide (HFSI) by fluorination of a liquid hydrogen bis(chlorosulfonyl)imide (HCSI) using a gaseous hydrogen fluoride. In some embodiments, HFSI that is produced is separated from the reaction mixture as a gas and is condensed to collect a liquid HFSI.
Abstract:
The invention provides a method for producing hydrogen bis(fluorosulfonyl)imide (HFSI) by reacting hydrogen bis(halosulfonyl)imide (HXSI) with hydrogen fluoride, where each X is independently a nonfluoro-halide, such as CI, Br, or I.
Abstract:
ALD processes for forming the silicon and oxygen containing films using mono-substituted TSA precursors are disclosed. The mono-substituted TSA precursors have the formula: (SiH3)2N-SiH2-X, wherein X is a halogen atom or an amino group.
Abstract:
The present invention provids a method for producing fluorosulfonylimides more safely, rapidly and efficiently, which enables suppression of production of by-products, and fluorosulfonylimides. The method for producing a fluorosulfonylimide salt of the present invention includes a step of reacting a fluoride compound containing at least one element selected from the group consisting of elements of Group 11 to Group 15 and Period 4 to Period 6 (excluding arsenic and antimony) with a compound represented by the following general formula (I) to give a fluorosulfonylimide salt represented by the general formula (II): [Chemical Formula 1] wherein R 1 denotes at least one element selected from the group consisting of elements of Group 11 to Group 15 and Period 4 to Period 6 (excluding arsenic and antimony); R 3 denotes fluorine, chlorine or a fluorinated alkyl group having 1 to 6 carbon atoms; R 4 denotes fluorine or a fluorinated alkyl group having 1 to 6 carbon atoms; and m denotes an integer of 2 or 3.