Invention Application
WO2016209379A1 DIFFERENTIAL ETCH OF METAL OXIDE BLOCKING DIELECTRIC LAYER FOR THREE-DIMENSIONAL MEMORY DEVICES
审中-公开
用于三维存储器件的金属氧化物阻挡介质层的差分蚀刻
- Patent Title: DIFFERENTIAL ETCH OF METAL OXIDE BLOCKING DIELECTRIC LAYER FOR THREE-DIMENSIONAL MEMORY DEVICES
- Patent Title (中): 用于三维存储器件的金属氧化物阻挡介质层的差分蚀刻
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Application No.: PCT/US2016/031331Application Date: 2016-05-06
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Publication No.: WO2016209379A1Publication Date: 2016-12-29
- Inventor: SHARANGPANI, Rahul , KOKA, Sateesh , MAKALA, Raghuveer S. , RANGANATHAN, Srikanth , JUANITAS, Mark , ALSMEIER, Johann
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024 US
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024 US
- Agency: RADOMSKY, Leon et al.
- Priority: US14/748,871 20150624
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L27/115
Abstract:
A method of manufacturing a semiconductor structure includes forming a stack of alternating layers comprising insulating layers and spacer material layers over a semiconductor substrate, forming a memory opening through the stack, forming an aluminum oxide layer having a horizontal portion at a bottom of the memory opening and a vertical portion at least over a sidewall of the memory opening, where the horizontal portion differs from the vertical portion by at least one of structure or composition, and selectively etching the horizontal portion selective to the vertical portion.
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