Invention Application
- Patent Title: A N-DOPED ELECTRICALLY CONDUCTIVE POLYMERIC MATERIAL
- Patent Title (中): N型电导电聚合材料
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Application No.: PCT/SG2016/050310Application Date: 2016-07-01
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Publication No.: WO2017003382A1Publication Date: 2017-01-05
- Inventor: CHUA, Lay-Lay , HO, Peter, Kian-Hoon , PNG, Rui-Qi , ANG, Mervin, Chun-Yi , CHOO, Kim-Kian , TANG, Cindy, Guan-Yu
- Applicant: NATIONAL UNIVERSITY OF SINGAPORE
- Applicant Address: 21 Lower Kent Ridge Road Singapore 119077 SG
- Assignee: NATIONAL UNIVERSITY OF SINGAPORE
- Current Assignee: NATIONAL UNIVERSITY OF SINGAPORE
- Current Assignee Address: 21 Lower Kent Ridge Road Singapore 119077 SG
- Agency: PATEL, Upasana
- Priority: SG10201505234R 20150701
- Main IPC: C08G61/12
- IPC: C08G61/12 ; H01B1/12 ; H01L51/00 ; C08L65/00
Abstract:
There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (E A ) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.
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