公开(公告)号：WO2016124533A1

公开(公告)日：2016-08-11

申请号：PCT/EP2016/052049

申请日：2016-02-01

Applicant: BASF SE ,  NATIONAL UNIVERSITY OF SINGAPORE

Inventor： HO, Peter K.-H. ,  CHUA, Lay-Lay ,  RUI-QI, Png ,  SEAH, Wei-Ling ,  ZHOU, Mi

IPC: H01L51/10

CPC classification number: H01L51/105 ,  H01L51/002 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/009 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

Abstract: This invention provides a transistor device structure that incorporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source−drain electrode array wherein the semiconductor is p-doped at the interface with the bonded−anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.

Abstract translation: 本发明提供一种晶体管器件结构，其结合了通过在半导体和源极 - 漏极电极阵列之间插入接合阴离子的分子薄层而形成的自对准掺杂接触，其中半导体在与键合阴极的界面处p掺杂， 阴离子层，以及使用结合到分子薄层中的氧化剂物质制造该结构的方法。 该器件在触点处显示欧姆空穴注入和空穴提取，以提供具有低接触电阻的高性能晶体管特性。

公开(公告)号：WO2012091679A1

公开(公告)日：2012-07-05

申请号：PCT/SG2011/000452

申请日：2011-12-28

Applicant: NATIONAL UNIVERSITY OF SINGAPORE ,  DSO NATIONAL LABORATORIES ,  CHUA, Lay-Lay ,  Ho, Peter ,  LIM, Geok, Kieng

Inventor： CHUA, Lay-Lay ,  Ho, Peter ,  LIM, Geok, Kieng

IPC: G02B1/00 ,  B82Y20/00 ,  G02B5/22

CPC classification number: G02F1/3611 ,  B82Y20/00 ,  G02B1/002 ,  G02F1/3523 ,  G02F2203/52 ,  H01S3/005 ,  Y10T428/249921

Abstract: An optical-limiter is disclosed herein. In an embodiment, the optical limiter comprises chemically functionalized graphene substantially spaced apart as single sheets in a substantially transparent liquid cell or solid thin film. A method of fabricating an optical response material is also disclosed.

Abstract translation: 本文公开了光学限制器。 在一个实施例中，光学限制器包括在基本上透明的液体电池或实体薄膜中基本间隔开的单一片材的化学官能化石墨烯。 还公开了制造光学响应材料的方法。

公开(公告)号：WO2011068482A1

公开(公告)日：2011-06-09

申请号：PCT/SG2010/000454

申请日：2010-12-06

Applicant: NATIONAL UNIVERSITY OF SINGAPORE ,  HO, Peter ,  CHUA, Lay-Lay ,  FRIEND, Richard, Henry ,  TANG, Jie-Cong ,  PNG, Rui-Qi ,  ANTO, Bibin, Thomas ,  CHIA, Perq-Jon ,  TAN, Zhi Kuang ,  CHOO, Kim Kian

Inventor： HO, Peter ,  CHUA, Lay-Lay ,  FRIEND, Richard, Henry ,  TANG, Jie-Cong ,  PNG, Rui-Qi ,  ANTO, Bibin, Thomas ,  CHIA, Perq-Jon ,  TAN, Zhi Kuang ,  CHOO, Kim Kian

IPC: C08K5/03 ,  C07C25/13 ,  C07C247/16 ,  C08J3/24 ,  C08K5/28

CPC classification number: C07C247/18 ,  C08K5/0025 ,  C08K5/28 ,  C09D201/04

Abstract: A cross-linkin moiety having a structure represented by formula (I) or (II): Wherein: Ar F comprises a fluorinated phenyl group having at least one non-fluorine substituent (R) that is bulkier than fluorine and which is located at the meta position relative to the N 3 group; W comprises an electron-withdrawing group; and L comprises a linker group. The cross-linking moiety is particularly useful in the manufacture of polymer semiconductor layers and photovoltaic devices.

Abstract translation: 具有由式（I）或（II）表示的结构的交联蛋白部分：其中：ArF包含具有至少一个比氟更大的非氟取代基（R）的氟化苯基，其位于元 相对于N3组的位置; W包括吸电子基团; L包含连接基团。 交联部分特别可用于制备聚合物半导体层和光伏器件。

公开(公告)号：WO2009085015A1

公开(公告)日：2009-07-09

申请号：PCT/SG2009/000001

申请日：2009-01-03

Applicant: NATIONAL UNIVERSITY OF SINGAPORE ,  HO, Peter ,  CHUA, Lay-Lay ,  WANG, Shuai ,  CHIA, Perq-jon ,  GOH, Ghim Siong

Inventor： HO, Peter ,  CHUA, Lay-Lay ,  WANG, Shuai ,  CHIA, Perq-jon ,  GOH, Ghim Siong

IPC: C01B31/04 ,  C09D5/24 ,  H01L29/40 ,  C07B41/00 ,  H01L29/12

CPC classification number: C01B31/0476 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/192 ,  C01B32/194 ,  C01B32/23 ,  C01B2204/02 ,  C01B2204/28 ,  C01B2204/30 ,  C09D5/24

Abstract: A functionalised graphene oxide and a method of making a functionalised graphene oxide comprising: (i) oxidising graphite to form graphite oxide wherein the graphene sheets which make up the graphite independently of each other have a basal plane fraction of carbon atoms in the sp 2 -hybridised state between 0.1 and 0.9, wherein the remainder fraction comprises sp 3 -hybridised carbon atoms which are bonded to oxygen groups selected from hydroxyl and/or epoxy and/or carboxylic acid; and (ii) exfoliating and in-situ functionalising the graphite oxide surface with one or more functional groups such that functionalisation of the surface is effected at a concentration greater than one functional group per 100 carbon atoms and less than one functional group per six carbon atoms. The functionalised graphene oxide is dispersible at high concentrations in appropriate solvents without aggregating or precipitating over extended periods at room temperature.

Abstract translation: 一种官能化石墨烯氧化物和制备官能化石墨烯氧化物的方法，包括：（i）氧化石墨以形成石墨氧化物，其中组成石墨的石墨烯片彼此独立地具有sp2-杂化的碳原子的基本面积分数 状态在0.1和0.9之间，其中剩余部分包含与选自羟基和/或环氧基和/或羧酸的氧基团键合的sp3杂化的碳原子; 和（ii）用一个或多个官能团去除和原位氧化氧化物表面官能化，使得表面的官能化以每100个碳原子大于一个官能团的浓度进行，并且每六个碳原子少于一个官能团 。 功能化石墨烯氧化物可以在适当的溶剂中以高浓度分散，而不会在室温下长时间聚集或沉淀。

公开(公告)号：WO2012161660A1

公开(公告)日：2012-11-29

申请号：PCT/SG2012/000182

申请日：2012-05-23

Applicant: NATIONAL UNIVERSITY OF SINGAPORE ,  CHUA, Lay-Lay ,  HO, Peter ,  PNG, Rui-Qi ,  KAM, Fong, Yu ,  SONG, Jie ,  WONG, Loke-Yuen ,  ZHUO, Jing-Mei ,  LOH, Kian, Ping ,  LIM, Geok-Kieng

Inventor： CHUA, Lay-Lay ,  HO, Peter ,  PNG, Rui-Qi ,  KAM, Fong, Yu ,  SONG, Jie ,  WONG, Loke-Yuen ,  ZHUO, Jing-Mei ,  LOH, Kian, Ping ,  LIM, Geok-Kieng

IPC: H01L21/00 ,  B32B7/00 ,  B32B27/00

CPC classification number: B32B37/025 ,  H01L21/2007 ,  Y10T428/30

Abstract: The present invention discloses a method for transferring a thin film from a first substrate to a second substrate comprising the steps of: providing a transfer structure and a thin film provided on a surface of a first substrate, the transfer structure comprising a support layer and a film contact layer, wherein the transfer structure contacts the thin film; removing the first substrate to obtain the transfer structure with the thin film in contact with the film contact layer; contacting the transfer structure obtained with a surface of a second substrate; and removing the film contact layer, thereby transferring the thin film onto the surface of the second substrate.

Abstract translation: 本发明公开了一种将薄膜从第一衬底转移到第二衬底的方法，包括以下步骤：提供设置在第一衬底的表面上的转移结构和薄膜，所述转移结构包括支撑层和 膜接触层，其中所述转移结构接触所述薄膜; 去除第一基板以获得具有与膜接触层接触的薄膜的转移结构; 使获得的转印结构与第二基板的表面接触; 并除去膜接触层，从而将薄膜转移到第二基板的表面上。

公开(公告)号：WO2011071452A1

公开(公告)日：2011-06-16

申请号：PCT/SG2010/000455

申请日：2010-12-07

Applicant: NATIONAL UNIVERSITY OF SINGAPORE ,  HO, Peter ,  CHUA, Lay-Lay ,  ANTO, Bibin Thomas ,  WONG, Loke-Yuen ,  PNG, Rui-Qi

Inventor： HO, Peter ,  CHUA, Lay-Lay ,  ANTO, Bibin Thomas ,  WONG, Loke-Yuen ,  PNG, Rui-Qi

IPC: B82B3/00 ,  C09C1/62 ,  B22F9/24 ,  C09C3/08

CPC classification number: C09C1/62 ,  B22F1/0018 ,  B22F1/0062 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/40

Abstract: Metal nanoparticles having a protective sub-monolayer of ligand molecules, the sub- monolayer comprising at least one non-labile ligand with ionisable terminal end group, and at least one labile ligand, characterised in that the metal nanoparticles have a dispersability in polar solvents of more than 50 mg/mL and a coalescence temperature less than 200 °C measured at a heating rate of 1 °C/ min.

Abstract translation: 具有配体分子的保护性亚单层的金属纳米颗粒，所述亚单层包含至少一个具有可离子化末端基团的非不稳定配体和至少一个不稳定配体，其特征在于所述金属纳米颗粒在极性溶剂中具有分散性 大于50mg / mL，聚合温度低于200℃，加热速率为1℃/ min。

公开(公告)号：WO2007004033A2

公开(公告)日：2007-01-11

申请号：PCT/IB2006/001829

申请日：2006-07-03

Applicant: NATIONAL UNIVERSITY OF SINGAPORE ,  HO, Peter, Kian-Hoon ,  CHUA, Lay-Lay ,  SIVARAMAKRISHNAN, Sankaran ,  CHIA, Perq-Jon

Inventor： HO, Peter, Kian-Hoon ,  CHUA, Lay-Lay ,  SIVARAMAKRISHNAN, Sankaran ,  CHIA, Perq-Jon

CPC classification number: H01B1/22 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a conductive composite comprising: a suspension matrix, metal nanoparticles suspended within the suspension matrix, wherein the conductive composite has a conductivity greater than 104 S cm -1 .

Abstract translation: 本发明提供一种导电复合材料，其包括：悬浮基质，悬浮在悬浮基质内的金属纳米颗粒，其中导电复合材料的导电率大于104Scm -1。

公开(公告)号：WO2016126209A1

公开(公告)日：2016-08-11

申请号：PCT/SG2016/050058

申请日：2016-02-03

Applicant: NATIONAL UNIVERSITY OF SINGAPORE

Inventor： CHUA, Lay-Lay ,  HO, Kian-Hoon, Peter ,  PNG, Rui-Qi ,  ANG, Chun-Yi, Mervin ,  CHOO, Kim Kian ,  TANG, Guan-Yu, Cindy

IPC: H01L51/00 ,  C08G73/02 ,  C08G61/12

CPC classification number: C08G61/12 ,  C08G73/026 ,  C08G2261/124 ,  C08G2261/145 ,  C08G2261/1452 ,  C08G2261/146 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/512 ,  C08G2261/592 ,  C08G2261/792 ,  C08G2261/92 ,  H01L51/002 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/4246 ,  H01L51/5088 ,  C08K5/56 ,  C08L65/00 ,  C08K5/59

Abstract: The invention provides high workfunction p-doped electrically conductive materials comprising one or more triarylaminium moieties counter-balanced by covalently bonded anions, and optionally further comprising one or more non-covalently attached cations. These materials can be used as hole-injection and hole-extraction layers to provide ohmic contacts to semiconductors with deeper ionization potentials than previously possible, up to the workfunction of the material.

Abstract translation: 本发明提供了高功函数p掺杂的导电材料，其包含一个或多个通过共价键合的阴离子反平衡的三芳基胺部分，并且任选地还包含一个或多个非共价连接的阳离子。 这些材料可以用作空穴注入和空穴提取层，以提供与先前可能的更高电离电位的半导体的欧姆接触，直到材料的功函数。

公开(公告)号：WO2007004995A1

公开(公告)日：2007-01-11

申请号：PCT/SG2006/000186

申请日：2006-07-04

Applicant: NATIONAL UNIVERSITY OF SINGAPORE ,  HO, Peter Kian-Hoon ,  CHUA, Lay-Lay ,  KHONG, Siong-Hee ,  SIVARAMAKRISHNAN, Sankaran ,  CHIA, Perq-Jon

Inventor： HO, Peter Kian-Hoon ,  CHUA, Lay-Lay ,  KHONG, Siong-Hee ,  SIVARAMAKRISHNAN, Sankaran ,  CHIA, Perq-Jon

IPC: C07C247/16 ,  B05D1/00 ,  C08F273/00 ,  C08F277/00 ,  G03F7/008 ,  H01L21/02 ,  H01L51/30

CPC classification number: C07C247/16 ,  C07C247/18 ,  G03F7/038

Abstract: There is provided a class of crosslinking compound, said compound comprising (i) one or more fluorinated aromatic group; and (ii) one or more ionisable group, wherein the crosslinking compound is soluble in at least one polar solvent. Methods of preparing the crosslinking compounds are also disclosed. There is further provided devices obtainable from the methods of preparing the crosslinking compounds.

Abstract translation: 提供一类交联化合物，所述化合物包含（i）一种或多种氟化芳族基团; 和（ii）一种或多种可离子化基团，其中所述交联化合物可溶于至少一种极性溶剂。 还公开了制备交联化合物的方法。 进一步提供可从制备交联化合物的方法获得的装置。

公开(公告)号：WO2020130934A1

公开(公告)日：2020-06-25

申请号：PCT/SG2018/050626

申请日：2018-12-21

Applicant: NATIONAL UNIVERSITY OF SINGAPORE

Inventor： HO, Peter Kian-Hoon ,  CHUA, Lay-Lay ,  PNG, Rui-Qi ,  TANG, Cindy Guan-Yu

IPC: H01L51/00

Abstract: A composition comprising: an organic semiconductor comprising one or more aromatic or heteroaromatic moieties; one or more cations covalently bonded to the organic semiconductor, or to a second material; and at least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV.