Invention Application
WO2017060836A1 AN APPARATUS COMPRISING A WAVEGUIDE-MODULATOR AND LASER-DIODE AND A METHOD OF MANUFACTURE THEREOF
审中-公开
包含波导调制器和激光二极管的装置及其制造方法
- Patent Title: AN APPARATUS COMPRISING A WAVEGUIDE-MODULATOR AND LASER-DIODE AND A METHOD OF MANUFACTURE THEREOF
- Patent Title (中): 包含波导调制器和激光二极管的装置及其制造方法
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Application No.: PCT/IB2016/055967Application Date: 2016-10-05
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Publication No.: WO2017060836A1Publication Date: 2017-04-13
- Inventor: OOI, Boon Siew , SHEN, Chao , NG, Tien Khee , ALYAMANI, Ahmed , ELDESOUKI, Munir
- Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY , KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY
- Applicant Address: 4700 King Abdullah University of Science and Technology Technology Transfer Office Thuwal, 23955-6900 SA
- Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY,KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY
- Current Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY,KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY
- Current Assignee Address: 4700 King Abdullah University of Science and Technology Technology Transfer Office Thuwal, 23955-6900 SA
- Agency: ALSTON & BIRD LLP et al.
- Priority: US62/237,523 20151005
- Main IPC: H01S5/026
- IPC: H01S5/026 ; H01S5/32 ; H01S5/343 ; H01S5/00
Abstract:
Example apparatuses are provided for simultaneous generation of high intensity light and modulated light signals at low modulation bias operating characteristics. An example apparatus includes a semipolar or nonpolar GaN-based substrate, a reverse- biased waveguide modulator section, and a forward-biased gain section based on InGaN/GaN quantum-well active regions, wherein the forward-biased gain section is grown on the semipolar or nonpolar GaN-based substrate. Methods of manufacturing the apparatuses described herein are also contemplated and described herein.
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