Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Patent Title (中): 半导体结构及其形成方法
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Application No.: PCT/CN2016/084747Application Date: 2016-06-03
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Publication No.: WO2017121067A1Publication Date: 2017-07-20
- Inventor: WU, Xian , GUO, Lei , WANG, Jing
- Applicant: TSINGHUA UNIVERSITY
- Applicant Address: Qinghuayuan, Haidian District Beijing 100084 CN
- Assignee: TSINGHUA UNIVERSITY
- Current Assignee: TSINGHUA UNIVERSITY
- Current Assignee Address: Qinghuayuan, Haidian District Beijing 100084 CN
- Agency: TSINGYIHUA INTELLECTUAL PROPERTY LLC
- Priority: CN201610018536.5 20160112; CN201610017898.2 20160112
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L21/335 ; H01L29/78 ; H01L21/336 ; H01L29/04
Abstract:
A semiconductor structure and a method for forming the semiconductor structure are provided. The semiconductor structure includes: a substrate, at least a part of an upper surface of the substrate being a nonpolar surface or a semi-polar surface including nitride semiconductor crystals; an interface layer formed on the nonpolar surface or the semi-polar surface, and including at least one selected from a nitride and an oxynitride; and a metal layer formed on a surface of the interface layer away from the substrate.
Information query
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