发明申请
- 专利标题： MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件的制造方法
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申请号： PCT/IB2017/052785申请日： 2017-05-12
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公开(公告)号： WO2018029547A1公开(公告)日： 2018-02-15
- 发明人: OHNO, Masakatsu , YASUMOTO, Seiji , IKEZAWA, Naoki , IDOJIRI, Satoru , YAMAZAKI, Shunpei
- 申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址： 398, Hase Atsugi-shi, Kanagawa 2430036 JP
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： 398, Hase Atsugi-shi, Kanagawa 2430036 JP
- 优先权： JP2016-156143 20160809
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; G09F9/30 ; H01L21/336 ; H01L27/12 ; H01L29/786 ; H01L51/50 ; H05B33/02 ; H05B33/10
摘要：
The yield of a manufacturing process of a display device is increased. The productivity of a display device is increased. A hydrogen-containing layer is formed over a substrate. Then, an oxygen-containing layer is formed over the hydrogen-containing layer. After that, a first layer is formed over the oxygen-containing layer with the use of a material containing a resin or a resin precursor. Subsequently, first heat treatment is performed on the first layer, so that a resin layer is formed. Next, a layer to be peeled is formed over the resin layer. The layer to be peeled and the substrate are separated from each other. The first heat treatment is performed in an oxygen-containing atmosphere.
IPC分类:
