A semiconductor device and method can comprise measuring a true position of each of a plurality of semiconductor die within an embedded die panel and determining a total radial shift of each of the plurality of semiconductor die. The total radial shift of each of the plurality of semiconductor die can be distributed to two or more layers for each of the plurality of semiconductor die by assigning a portion of the total radial shift to each of the layers according to a priority list to form a distributed radial shift for each of the layers. A transformation for each of the layers for each of the plurality of semiconductor die can be transformed using the distributed radial shift for each of the layers. A unit specific pattern can be formed over each of the plurality of semiconductor die with the transformation for each of the layers.