Invention Application
- Patent Title: OPTICAL NEAR-FIELD METROLOGY
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Application No.: PCT/US2017/041404Application Date: 2017-07-10
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Publication No.: WO2018063471A3Publication Date: 2018-04-05
- Inventor: PASKOVER, Yuri , MANASSEN, Amnon , LEVINSKI, Vladimir
- Applicant: KLA-TENCOR CORPORATION
- Applicant Address: Legal Dept. 1 Technology Drive Milpitas, California 95035 US
- Assignee: KLA-TENCOR CORPORATION
- Current Assignee: KLA-TENCOR CORPORATION
- Current Assignee Address: Legal Dept. 1 Technology Drive Milpitas, California 95035 US
- Agency: MCANDREWS, Kevin et al.
- Priority: US62/400,627 20160928; US15/599,881 20170519
- Main IPC: G01B11/02
- IPC: G01B11/02 ; G01B9/02
Abstract:
Systems and methods are provided which utilize optical microcavity probes to map wafer topography by near-field interactions therebetween in a manner which complies with high volume metrology requirements. The optical microcavity probes detect features on a wafer by shifts in an interference signal between reference radiation and near-field interactions of radiation in the microcavities and wafer features, such as device features and metrology target features. Various illumination and detection configurations provide quick and sensitive signals which are used to enhance optical metrology measurements with respect to their accuracy and sensitivity. The optical microcavity probes may be scanned at a controlled height and position with respect to the wafer and provide information concerning the spatial relations between device and target features.
Public/Granted literature
- WO2018063471A2 OPTICAL NEAR-FIELD METROLOGY Public/Granted day:2018-04-05
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