VACUUM HOLD-DOWN APPARATUS FOR FLATTENING BOWED SEMICONDUCTOR WAFERS

    公开(公告)号:WO2020197544A1

    公开(公告)日:2020-10-01

    申请号:PCT/US2019/023918

    申请日:2019-03-25

    Abstract: Vacuum hold-down apparatus suitable for retaining a wafer in a desired position and orientation, the apparatus including a vacuum chuck assembly defining a vacuum chuck surface having a vacuum communication aperture, a venturi vacuum generator fixed with respect to the vacuum chuck assembly and communicating with the vacuum chuck surface via the vacuum communication aperture and a positive pressure fluid line communicating with the venturi vacuum generator.

    ESTIMATION OF ASYMMETRIC ABERRATIONS
    3.
    发明申请

    公开(公告)号:WO2020091733A1

    公开(公告)日:2020-05-07

    申请号:PCT/US2018/058068

    申请日:2018-10-30

    Abstract: Metrology targets, target design methods and metrology measurement methods are provided, which estimate the effects of asymmetric aberrations, independently or in conjunction with metrology overlay estimations. Targets comprise one or more pairs of segmented periodic structures having a same coarse pitch, a same 1:1 line to space ratio and segmented into fine elements at a same fine pitch, wherein the segmented periodic structures differ from each other in that one thereof lacks at least one of its corresponding fine elements and/or in that one thereof comprises two groups of the fine elements which are separated from each other by a multiple of the fine pitch. The missing element(s) and/or central gap enable deriving the estimation of aberration effects from measurements of the corresponding segmented periodic structures. The fine pitches may be selected to correspond to the device fine pitches in the corresponding layer.

    MULTIMODE DEFECT CLASSIFICATION IN SEMICONDUCTOR INSPECTION

    公开(公告)号:WO2020018856A1

    公开(公告)日:2020-01-23

    申请号:PCT/US2019/042500

    申请日:2019-07-19

    Abstract: A semiconductor-inspection tool scans a semiconductor die using a plurality of optical modes. A plurality of defects on the semiconductor die are identified based on results of the scanning. Respective defects of the plurality of defects correspond to respective pixel sets of the semiconductor-inspection tool. The scanning fails to resolve the respective defects. The results include multi-dimensional data based on pixel intensity for the respective pixel sets, wherein each dimension of the multi-dimensional data corresponds to a distinct mode of the plurality of optical modes. A discriminant function is applied to the results to transform the multi-dimensional data for the respective pixel sets into respective scores. Based at least in part on the respective scores, the respective defects are divided into distinct classes.

    CORRELATING SEM AND OPTICAL IMAGES FOR WAFER NOISE NUISANCE IDENTIFICATION

    公开(公告)号:WO2019245830A1

    公开(公告)日:2019-12-26

    申请号:PCT/US2019/036872

    申请日:2019-06-13

    Abstract: Disclosed are apparatus and methods for inspecting a semiconductor sample. Locations corresponding to candidate defect events on a semiconductor sample are provided from an optical inspector operable to acquire optical images from which such candidate defect events are detected at their corresponding locations across the sample. High-resolution images are acquired from a high-resolution inspector of the candidate defect events at their corresponding locations on the sample. Each of a set of modelled optical images, which have been modeled from a set of the acquired high-resolution images, is correlated with corresponding ones of a set of the acquired optical images, to identify surface noise events, as shown in the set of high-resolution images, as sources for the corresponding candidate events in the set of acquired optical images. Otherwise, a subsurface event is identified as a likely source for a corresponding candidate defect event.

    CROSS LAYER COMMON-UNIQUE ANALYSIS FOR NUISANCE FILTERING

    公开(公告)号:WO2019236624A1

    公开(公告)日:2019-12-12

    申请号:PCT/US2019/035451

    申请日:2019-06-04

    Inventor: BRAUER, Bjorn

    Abstract: Common events between layers on a semiconductor wafer are filtered. Common events should contain the majority of defects of interest. Only nuisance events that are common between layers on the semiconductor wafer remain, which reduces the nuisance rate. Defects that are common across layers can be filtered based on, for example, defect coordinates, a difference image, or defect attributes.

    REFLECTION-MODE ELECTRON-BEAM INSPECTION USING PTYCHOGRAPHIC IMAGING

    公开(公告)号:WO2019226578A1

    公开(公告)日:2019-11-28

    申请号:PCT/US2019/033196

    申请日:2019-05-21

    Abstract: A particle-beam inspection system may include a reflective particle-beam imaging system providing an image of a selected portion of a sample and a diffraction pattern of the selected portion of the sample and a controller communicatively coupled to the reflective particle-beam imaging system. The controller may receive two or more sample-plane images from the reflective particle-beam imaging system associated with two or more selected portions of the sample, where at least some of the two or more selected portions of the sample overlap. The controller may further receive two or more diffraction-plane images from the reflective particle-beam imaging system associated with the two or more selected portions of the sample. The controller may further construct one or more output images of the two or more selected portions of the sample from the two or more diffraction-plane images using phase information obtained from the two or more sample-plane images.

    PHASE FILTER FOR ENHANCED DEFECT DETECTION IN MULTILAYER STRUCTURE

    公开(公告)号:WO2019221938A1

    公开(公告)日:2019-11-21

    申请号:PCT/US2019/030777

    申请日:2019-05-06

    Abstract: Disclosed are methods and apparatus for facilitating defect detection in a multilayer stack. The method includes selection of a set of structure parameters for modeling a particular multilayer stack and a particular defect contained within such particular multilayer stack and a set of operating parameters for an optical inspection system. Based on the set of structure and operating parameters, an electromagnetic simulation is performed of waves scattered from the particular multilayer stack and defect and arriving at a collection pupil of the optical inspection system. Based on the simulated waves at the collection pupil, a design of a phase filter having a plurality of positions for changing a plurality of phases within a plurality of corresponding positions of the collection pupil of the optical inspection tool is determined so as to compensate for an adverse effect of the particular multilayer stack on obtaining a defect signal for the defect within such particular multilayer stack and/or to enhance such defect signal. The design of the phase filter is then provided for fabrication or configuration of a phase filter inserted within the optical inspection system for detection of defects in multilayer stacks with the same structure parameters as the particular multilayer stack. Methods and systems for inspecting a multilayer stack for defects are also disclosed.

    ARRAY-BASED CHARACTERIZATION TOOL
    10.
    发明申请

    公开(公告)号:WO2019213000A1

    公开(公告)日:2019-11-07

    申请号:PCT/US2019/029764

    申请日:2019-04-30

    Abstract: A scanning electron microscopy (SEM) system includes a plurality of electron beam sources configured to generate a primary electron beam. The SEM system includes an electron-optical column array with a plurality of electron-optical columns. An electron-optical column includes a plurality of electron-optical elements. The plurality of electron-optical elements includes a deflector layer configured to be driven via a common controller shared by at least some of the plurality of electron-optical columns and includes a trim deflector layer configured to be driven by an individual controller. The plurality of electron-optical elements is arranged to form an electron beam channel configured to direct the primary electron beam to a sample secured on a stage, which emits an electron beam in response to the primary electron beam. The electron-optical column includes an electron detector. The electron beam channel is configured to direct the electron beam to the electron detector.

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