Invention Application
- Patent Title: EXTENDED ERROR DETECTION FOR A MEMORY DEVICE
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Application No.: PCT/US2020/020679Application Date: 2020-03-02
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Publication No.: WO2020180804A1Publication Date: 2020-09-10
- Inventor: SCHAEFER, Scott, E. , KWAK, Jongtae , BOEHM, Aaron, P.
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: 8000 S. Federal Way Boise, Idaho 83716-9632 US
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: 8000 S. Federal Way Boise, Idaho 83716-9632 US
- Agency: HARRIS, Philip
- Priority: US62/812,515 20190301; US16/803,856 20200227
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/38 ; G06F3/06
Abstract:
Methods, systems, and devices for extended error detection for a memory device are described. For example, during a read operation, the memory device may perform an error detection operation capable of detecting single-bit errors, double-bit errors, and errors that impact more than two bits and indicate the detected error to a host device. The memory device may use parity information to perform an error detection procedure to detect and/or correct errors within data retrieved during the read operation. In some cases, the memory device may associate each bit of the data read during the read operation with two or more bits of parity information. For example, the memory device may use two or more sets of parity bits to detect errors within a matrix of the data. Each set of parity bits may correspond to a dimension of the matrix of data.
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