Invention Application
- Patent Title: IN-SITU CONTROL OF FILM PROPERTIES DURING ATOMIC LAYER DEPOSITION
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Application No.: PCT/US2020/035996Application Date: 2020-06-03
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Publication No.: WO2020247548A1Publication Date: 2020-12-10
- Inventor: AGNEW, Douglas Walter , ABEL, Joseph R. , CURTIN, Ian John , KUMAR, Purushottam , GUPTA, Awnish
- Applicant: LAM RESEARCH CORPORATION
- Applicant Address: 4650 Cushing Pkwy. Fremont, California 94538 US
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: 4650 Cushing Pkwy. Fremont, California 94538 US
- Agency: TSAI, Patricia et al.
- Priority: US62/858,812 20190607
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; C23C16/56
Abstract:
Methods of providing control of film properties during atomic layer deposition using intermittent plasma treatment in-situ are provided herein. Methods include modulating gas flow rate ratios used to generate plasma during intermittent plasma treatment, toggling plasma power, and modulating chamber pressure.
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