公开(公告)号：WO2023064199A1

公开(公告)日：2023-04-20

申请号：PCT/US2022/046149

申请日：2022-10-10

Applicant: APPLIED MATERIALS, INC.

Inventor： KOTAGI, Udit S. ,  KULKARNI, Mayur Govind

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  C23C16/44

Abstract: Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.

公开(公告)号：WO2023058355A1

公开(公告)日：2023-04-13

申请号：PCT/JP2022/032016

申请日：2022-08-25

Applicant: 信越半導体株式会社

Inventor： 大槻　剛 ,  萩本　和徳 ,  石崎　順也 ,  阿部　達夫 ,  鈴木　温 ,  松原　寿樹

IPC: C30B29/62 ,  C23C16/02 ,  C23C16/42 ,  C23C16/56 ,  C30B25/02 ,  C30B33/00 ,  H01L21/205

Abstract: 本発明は、単結晶Ｓｉ基板上に３Ｃ－ＳｉＣ単結晶膜をヘテロエピタキシャル成長させた後に剥離するヘテロエピタキシャル膜の作製方法であって、減圧ＣＶＤ装置で、単結晶Ｓｉ基板の表面の自然酸化膜を水素ベイクにより除去する第一工程と、炭素とケイ素を含むソースガスを供給しつつ、１３３３Ｐａ以下、３００～９５０℃以下でＳｉＣの核形成を行う第二工程と、１３３３Ｐａ以下、８００℃以上１２００℃未満で３Ｃ－ＳｉＣ単結晶膜を形成し、かつ３Ｃ－ＳｉＣ単結晶膜直下に空孔を形成する第三工程と、３Ｃ－ＳｉＣ単結晶膜を空孔で剥離してヘテロエピタキシャル膜を作製する第四工程と、を含むヘテロエピタキシャル膜の作製方法である。これにより、デバイスへのダメージが少なく、かつ材料のロスを少なくして効率良く薄膜状のヘテロエピタキシャル膜を入手する方法が提供される。

公开(公告)号：WO2023275237A1

公开(公告)日：2023-01-05

申请号：PCT/EP2022/068049

申请日：2022-06-30

Applicant: WALTER AG

Inventor： MANNS, Thorsten ,  JANSSEN, Wiebeke

IPC: C23C28/00 ,  C23C28/04 ,  C23C30/00 ,  C23C16/02 ,  C23C16/36 ,  C23C16/40 ,  C23C16/44 ,  C23C16/52 ,  C23C16/56 ,  C23C16/0272 ,  C23C16/405 ,  C23C28/044 ,  C23C28/40 ,  C23C28/42 ,  C23C30/005

Abstract: The present invention relates to a coated cutting tool consisting of a substrate and a multi-layered wear resistant hard coating and a process for manufacturing the same, the layers of the hard coating being deposited by chemical vapour deposition (CVD) and comprising a TiCN layer with a multi-sublayer structure of alternating C-type and N-type sublayers and an overall fiber texture characterized by a texture coefficient TC (4 2 2) in the range from 3.0 to 5.5, an oxygen containing Ti or Ti+Al compound bonding layer, and an α-Al2O3 layer on top of the bonding layer with an overall fiber texture characterized by a texture coefficient TC (0 0 12) > 5.

公开(公告)号：WO2022242879A1

公开(公告)日：2022-11-24

申请号：PCT/EP2021/063674

申请日：2021-05-21

Applicant: APPLIED MATERIALS, INC. ,  CROUCH, Tarquin Lucas

Inventor： CROUCH, Tarquin Lucas

IPC: C23C14/56 ,  C23C16/54 ,  B32B15/04 ,  B32B18/00 ,  B32B37/00 ,  B65H18/20 ,  B65D65/00 ,  C08J5/18 ,  C23C16/56 ,  C23C14/58

Abstract: According to one aspect of the present disclosure, an apparatus (10, 20) for manufacturing a composite film (104) is provided. The composite film (104) includes a first film (101), at least one deposited layer (101a) and at least one second film (102, 103) having a lamination layer. The apparatus (10, 20) includes a vacuum chamber (400), a deposition apparatus (200) for depositing the at least one deposited layer (101a) on the first film (101), and a laminating apparatus (300) for laminating the at least one second film (102, 103) to the first film (101) such that the lamination layer of the at least one second film faces the at least one deposited layer (101a), wherein the deposition apparatus (200) and the laminating apparatus (300) are provided within the vacuum chamber (400). According to a further aspect of the present disclosure, a method (30) for manufacturing a composite film is provided, including providing (32) a first film, depositing (33) at least one deposited layer on the first film, providing (34) at least one second film having a lamination layer, and laminating (36) the at least one second film to the first film such that the lamination layer of the at least one second film faces the at least one deposited layer, wherein the depositing (33) and the laminating (36) are performed in the same vacuum chamber. According to a further aspect of the present disclosure, a composite film manufactured by the apparatus and using the method according to aspects of the present disclosure is provided.

公开(公告)号：WO2022187247A1

公开(公告)日：2022-09-09

申请号：PCT/US2022/018341

申请日：2022-03-01

Applicant: VERSUM MATERIALS US, LLC

Inventor： CHANDRA, Haripin ,  PEARLSTEIN, Ronald M. ,  LEI, Xinjian

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  H01L21/02 ,  H01L21/3105

Abstract: A method for selective deposition of a silicon and oxygen containing dielectric film onto a substrate is disclosed. The method includes the steps of providing a substrate comprising a dielectric surface and a metal, or metal hydride, surface to a reactor. A halogenated silicon-containing compound may be introduced to the reactor to form a silicon-containing layer more abundantly on the dielectric surface than on the metal, or metal hydride, surface. A nitrogen source may be introduced into the reactor to react with the silicon-containing layer to form a silicon nitride film or carbon doped silicon nitride film. An oxygen-containing source may be introduced to the reactor to react with the silicon nitride or carbon doped silicon nitride film to form the silicon and oxygen containing dielectric film.

公开(公告)号：WO2022103095A1

公开(公告)日：2022-05-19

申请号：PCT/KR2021/016113

申请日：2021-11-08

Applicant: 부경대학교 산학협력단

Inventor： 고민성

IPC: H01M4/36 ,  H01M4/38 ,  H01M4/48 ,  H01M10/052 ,  C23C16/24 ,  C23C16/44 ,  C23C16/26 ,  C23C16/56

Abstract: 본 발명은 코어 및 쉘층 사이에 빈 공간(void)을 포함하는 요크-쉘(yolk-shell) 구조의 리튬 이차전지용 음극 활물질로서, 상기 코어는 표면에 실리콘 산화물 코팅층을 가지는 실리콘 나노입자를 포함하고, 상기 쉘층은 제1 실리콘 산화물층, 실리콘층 및 제2 실리콘 산화물층을 포함하는 다층 구조로 이루어진 것을 특징으로 하는 요크-쉘 구조의 이차전지용 음극 활물질, 및 그 제조방법 및 상기 음극 활물질을 포함하는 리튬 이차전지에 대한 것이다.

公开(公告)号：WO2022098517A1

公开(公告)日：2022-05-12

申请号：PCT/US2021/055989

申请日：2021-10-21

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON U.S. HOLDINGS, INC.

Inventor： YU, Kai-Hung ,  O'MEARA, David L. ,  HIGUCHI, Hisashi ,  AIZAWA, Hirokazu ,  ZANDI, Omid ,  WAJDA, Cory ,  LEUSINK, Gerrit J.

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/56

Abstract: A method for filling recessed features with a low-resistivity metal includes providing a patterned substrate containing a recessed feature formed in a first layer and a second layer that is exposed in the recessed feature, pre-treating the substrate with a surface modifier that increases metal deposition selectivity on the second layer relative to on the first layer, and depositing a metal layer on the substrate by vapor phase deposition, where the metal layer is preferentially deposited on the second layer in the recessed feature. The method further includes removing metal nuclei deposited on the first layer, including on a field area and on sidewalls of the first layer in the recessed feature, to selectively form the metal layer on the second layer in the recessed feature, where the removing includes exposing the patterned substrate to an etching gas containing ozone.

公开(公告)号：WO2022072158A1

公开(公告)日：2022-04-07

申请号：PCT/US2021/050956

申请日：2021-09-17

Applicant: APPLIED MATERIALS, INC.

Inventor： BOBEK, Sarah Michelle ,  KHAJA, Abdul Aziz ,  LIMDULPAIBOON, Ratsamee ,  LEE, Kwangduk Douglas

IPC: C23C16/40 ,  C23C16/56 ,  C23C16/505 ,  C23C16/52 ,  C23C16/44

Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

公开(公告)号：WO2022069842A1

公开(公告)日：2022-04-07

申请号：PCT/FR2021/051697

申请日：2021-09-30

Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE DE LILLE ,  CENTRALE LILLE INSTITUT ,  UNIVERSITE POLYTECHNIQUE HAUTS-DE-FRANCE ,  UNIVERSITE D'ARTOIS ,  UNIVERSITE DE NANTES

Inventor： LETHIEN, Christophe ,  HALLOT, Maxime ,  ROUSSEL, Pascal ,  BROUSSE, Thierry

IPC: H01M4/04 ,  H01M4/1391 ,  H01M4/505 ,  H01M4/525 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

Abstract: L'invention concerne un procédé de fabrication permettant de fabriquer une couche d'électrode positive à base de matériau lithié adaptée à des batteries tridimensionnelles ou batterie 3D de sorte à obtenir un matériau lithié sur un substrat, ledit matériau lithié comprenant plusieurs couches minces, c'est-à-dire des couches présentant des épaisseurs comprises entre 1 nm et 1 µm, constituées de matériaux complexes, électrochimiquement actifs, et qui soient, entre autres, homogènes et adaptées à se conformer aux reliefs plus ou moins complexes de la surface du substrat sur laquelle est déposé le matériau lithié.

公开(公告)号：WO2021257390A1

公开(公告)日：2021-12-23

申请号：PCT/US2021/036933

申请日：2021-06-11

Applicant: APPLIED MATERIALS, INC.

Inventor： TRINH, Cong ,  MALDONADO-GARCIA, Maribel ,  BALSEANU, Mihaela A. ,  GARACHTCHENKO, Alexander V. ,  TANAKA, Tsutomu

IPC: H01L45/00 ,  C23C16/30 ,  C23C16/56 ,  C23C16/0245 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/45546 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02104

Abstract: Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.