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    CONICAL WAFER CENTERING AND HOLDING DEVICE FOR SEMICONDUCTOR PROCESSING
    5.
    发明申请
    CONICAL WAFER CENTERING AND HOLDING DEVICE FOR SEMICONDUCTOR PROCESSING 审中-公开

    公开(公告)号：WO2018118718A1

    公开(公告)日：2018-06-28

    申请号：PCT/US2017/066870

    申请日：2017-12-15

    Applicant: LAM RESEARCH CORPORATION

    Inventor： AGARWAL, Pulkit ,  KARIM, Ishtak ,  KUMAR, Purushottam ,  LAVOIE, Adrien ,  KIM, Sung, Je ,  BREILING, Patrick

    IPC: H01L21/687 ,  H01L21/67 ,  C23C16/455

    Abstract: A semiconductor system includes a chamber, a pedestal disposed in the chamber, and a focus ring that surrounds the pedestal. The pedestal has a center region for supporting a central region of a substrate, e.g., a wafer. The focus ring is configured to surround the center region of the pedestal. The focus ring has an annular support region that extends between an inner portion of the focus ring and an outer portion of the focus ring. The annular support region, which is disposed at an angle relative to a horizontal line, provides a knife-edge contact for the substrate when present over the center region of the pedestal and the annular support region of the focus ring. The knife-edge contact between the edge of the substrate and the annular support region of the focus ring disables chemical access to the substrate backside and thereby reduces unwanted backside deposition.

    MODIFYING HYDROPHOBICITY OF A WAFER SURFACE USING AN ORGANOSILICON PRECURSOR
    6.
    发明申请
    MODIFYING HYDROPHOBICITY OF A WAFER SURFACE USING AN ORGANOSILICON PRECURSOR 审中-公开

    公开(公告)号：WO2019199682A1

    公开(公告)日：2019-10-17

    申请号：PCT/US2019/026355

    申请日：2019-04-08

    Applicant: LAM RESEARCH CORPORATION

    Inventor： FIELDS, Jeremy D ,  GUPTA, Awnish ,  AGNEW, Douglas W. ,  ABEL, Joseph R. ,  KUMAR, Purushottam

    IPC: H01L21/02 ,  H05H1/46 ,  H01J37/32

    Abstract: Methods and apparatuses for modifying a wafer surface using an organosilicon precursor are provided herein. The wafer surface is dosed with the organosilicon precursor following deposition of a dielectric material by an atomic layer deposition (ALD) process. In some implementations, the dielectric layer is made of silicon oxide. Dosing the wafer surface with the organosilicon precursor may occur in the same chamber as the ALD process. The organosilicon precursor may modify the wafer surface to increase its hydrophobicity so that photoresist adhesion is improved on the wafer surface. In some implementations, the wafer surface may be exposed to an inert gas RF plasma after dosing the wafer surface with the organosilicon precursor.

    ATOMIC LAYER CLEAN FOR REMOVAL OF PHOTORESIST PATTERNING SCUM
    8.
    发明申请
    ATOMIC LAYER CLEAN FOR REMOVAL OF PHOTORESIST PATTERNING SCUM 审中-公开

    公开(公告)号：WO2019018227A1

    公开(公告)日：2019-01-24

    申请号：PCT/US2018/042024

    申请日：2018-07-13

    Applicant: LAM RESEARCH CORPORATION

    Inventor： AGARWAL, Pulkit ,  KUMAR, Purushottam ,  LAVOIE, Adrien

    IPC: G03F7/20 ,  H01L21/683 ,  H01L21/027 ,  H01L21/67

    Abstract: Methods and apparatuses for removing photoresist patterning scum from patterning mandrel structures without damaging other features or structures on a semiconductor substrate are desirable for patterning precision. Methods involve cleaning carbon-containing features on a semiconductor substrate by an atomic layer cleaning (ALC) process to descum the carbon-containing features without substantially modifying feature critical dimensions. The ALC process involves exposing the carbon-containing features to an oxidant or reductant in absence of a plasma, or other energetic activation, to modify scum on the surface of the carbon-containing features. The modified scum on the surface of the carbon-containing features is then exposed to an inert gas along with a plasma ignited at a pressure between 0.1 Torr and 10 Torr and a power of less than 200W to remove the modified scum from the surface of the carbon-containing features.

    LOW-K ALD GAP-FILL METHODS AND MATERIAL
    9.
    发明申请
    LOW-K ALD GAP-FILL METHODS AND MATERIAL 审中-公开

    公开(公告)号：WO2020061491A1

    公开(公告)日：2020-03-26

    申请号：PCT/US2019/052215

    申请日：2019-09-20

    Applicant: LAM RESEARCH CORPORATION

    Inventor： ABEL, Joseph R. ,  AGNEW, Douglas Walter ,  LAVOIE, Adrien ,  CURTIN, Ian John ,  KUMAR, Purushottam

    IPC: H01L21/02 ,  H01L21/768

    Abstract: Various embodiments include methods to produce low dielectric-constant (low-k) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-k materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace "F" with "I" or "Br"). Other methods, chemistries, and techniques are disclosed.

    METHOD AND APPARATUS FOR MODULATING FILM UNIFORMITY
    10.
    发明申请
    METHOD AND APPARATUS FOR MODULATING FILM UNIFORMITY 审中-公开

    公开(公告)号：WO2020041138A1

    公开(公告)日：2020-02-27

    申请号：PCT/US2019/046867

    申请日：2019-08-16

    Applicant: LAM RESEARCH CORPORATION

    Inventor： AGARWAL, Pulkit ,  LAVOIE, Adrien ,  KUMAR, Purushottam

    IPC: H01L21/02 ,  H01L21/67 ,  C23C16/455 ,  H01J37/32

    Abstract: A method for processing a substrate is provided, wherein the substrate is located below a showerhead in a processing chamber. A deposition layer is deposited on the substrate, wherein at least one deposition gas is provided through the showerhead. A secondary purge gas is flowed during the depositing the deposition layer from a location outside of the showerhead in the processing chamber forming a flow curtain around an outer edge of the showerhead, wherein the secondary purge gas comprises at least one component gas. A partial pressure of the at least one component gas is changed over time during the depositing the deposition layer, wherein the depositing the deposition layer has a non-uniformity, wherein the changing the partial pressure changes the non-uniformity over time during the depositing the deposition layer.

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