A method of producing Gate-AII-Around (GAA) devices on a semiconductor wafer. The method includes defining a first area and etching the first area to obtain a first space for the first GAA device. The method further includes applying a first stack in the first space, by alternatingly applying nanosheets and spacer elements and applying a final layer of the etchable material. The method includes defining a second area and etching the second area to obtain a second space for the second GAA device. The method further includes applying a second stack in the second space, and applying a final layer of the etchable material. Notably, the first stack and the second stack differ from one another with respect to one or more of the number of nanosheets, the thickness of each nanosheet, and the height of the spacer elements.