A semiconductor storage device according to the present embodiment is provided with: a plurality of first conductor layers which are laminated in a first direction and which each contain tungsten; laminated parts laminated alternately with the plurality of first conductor layers; a plurality of insulator films each including a first projection part projecting in a second direction orthogonal to the first direction with respect to the laminated parts; a semiconductor layer extending in the the first direction within a laminated body formed with the plurality of laminated parts and the plurality of first conductor layers; an electric charge storage layer disposed between the plurality of first conductor layers and the semiconductor layer; a plurality of second conductor layers which are disposed in contact with the first conductor layers on the first projection parts in the insulator films and which each have silicon including impurities; and a plurality of contact plugs that are disposed on one of the plurality of second conductor layers so as to be in contact with said one of the second conductor layers, that have conductivity, and that extend in the first direction.