Invention Application
- Patent Title: PROGRAMMABLE MEMORY TIMING
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Application No.: PCT/US2021/065330Application Date: 2021-12-28
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Publication No.: WO2022146997A1Publication Date: 2022-07-07
- Inventor: KIM, Kang-Yong , LEE, Hyun Yoo , HOLLIS, Timothy M. , LIM, Dong Soon
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: 8000 So. Federal Way
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: 8000 So. Federal Way
- Agency: SAUNDERS, Keith W.
- Priority: US17/562,560 2021-12-27
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G11C7/22
Abstract:
Described apparatuses and methods enable communication between a host device (104) and a memory device (108) to establish relative delays between different data lines (304). If data signals propagate along a bus with the same timing, simultaneous switching output (SSO) and crosstalk can adversely impact channel timing budget parameters. An example system includes an interconnect (106) having multiple data lines that couple the host device to the memory device. In example operations, the host device can transmit to the memory device a command (122) indicative of a phase offset between two or more data lines (304, 306) of the multiple data lines. The memory device can implement the command by transmitting or receiving signals via the interconnect with different relative phase offsets (312) between data lines (314, 316). The host device (e.g., a memory controller) can determine appropriate offsets for a given apparatus. Lengths of the offsets can vary. Further, a system can activate the phase offsets based on frequency.
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