Invention Application
- Patent Title: METAL PILLAR CONNECTION TOPOLOGIES IN A RADIO FREQUENCY TRANSISTOR AMPLIFIER DIE FOR HETEROGENEOUS PACKAGING
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Application No.: PCT/US2022/075631Application Date: 2022-08-30
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Publication No.: WO2023034773A1Publication Date: 2023-03-09
- Inventor: RADULESCU, Fabian , NOORI, Basim , SHEPPARD, Scott , LIM, Kwangmo Chris
- Applicant: WOLFSPEED, INC.
- Applicant Address: 4600 Silicon Drive
- Assignee: WOLFSPEED, INC.
- Current Assignee: WOLFSPEED, INC.
- Current Assignee Address: 4600 Silicon Drive
- Agency: SABAPATHYPILLAI, Rohan, G. et al.
- Priority: US17/466,783 2021-09-03
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L23/057 ; H01L23/36 ; H01L23/482 ; H01L29/41 ; H01L23/485 ; H01L23/66 ; H01L23/08 ; H01L23/31
Abstract:
A radio frequency ("RF") transistor amplifier die includes a semiconductor layer structure having a plurality of transistor cells, and an insulating layer on a surface of the semiconductor layer structure. Conductive pillar structures protrude from the insulating layer opposite the surface of the semiconductor layer structure, and are configured to provide input signal, output signal, or ground connections to the transistor cells. The ground connections are arranged between the input and/or output signal connections to the transistor cells. Related devices and packages are also discussed.
Information query
IPC分类:
