A method for designing a low voltage capacitive micromachined ultrasonic transducer (CMUT) is provided. The method includes starting from a base silicon wafer includes starting with a N-type Silicon Wafer and growing base oxide by patterning with a metal mask over the base oxide, patterning with a Field Oxide (FOX) Mask over a copper (Cu) or Aluminium (Al) metal (M1) layer that is deposited over the base oxide, depositing polysilicon over the entire silicon wafer and doping the polysilicon with a donor species with a concentration approaching its respective solid solubility limit and subsequently depositing titanium (Ti) over the doped polysilicon that is deposited on the entire silicon wafer and subsequently depositing a dielectric layer. The dielectric layer is standalone Silicon Dioxide or in a stack with Hafnium Oxide or alternatively in a stack with Silicon Nitride or a suitable stack of high relative permittivity materials.