公开(公告)号：WO2023047417A1

公开(公告)日：2023-03-30

申请号：PCT/IN2022/050851

申请日：2022-09-23

申请人： SENSONICS DEVICES PVT LTD

发明人： PANWAR, . Brishbhan Singh ,  GUPTA, Rajat

IPC分类号： H01L27/04 ,  B81C1/00 ,  B81B7/00 ,  H04R19/00

摘要： A method for designing a low voltage capacitive micromachined ultrasonic transducer (CMUT) is provided. The method includes starting from a base silicon wafer includes starting with a N-type Silicon Wafer and growing base oxide by patterning with a metal mask over the base oxide, patterning with a Field Oxide (FOX) Mask over a copper (Cu) or Aluminium (Al) metal (M1) layer that is deposited over the base oxide, depositing polysilicon over the entire silicon wafer and doping the polysilicon with a donor species with a concentration approaching its respective solid solubility limit and subsequently depositing titanium (Ti) over the doped polysilicon that is deposited on the entire silicon wafer and subsequently depositing a dielectric layer. The dielectric layer is standalone Silicon Dioxide or in a stack with Hafnium Oxide or alternatively in a stack with Silicon Nitride or a suitable stack of high relative permittivity materials.