公开(公告)号：EP3644340A3

公开(公告)日：2020-05-06

申请号：EP19214078.8

申请日：2016-03-17

申请人： Bourns, Inc.

发明人： HEATH, Jan ,  BOURNS, Gordan L

IPC分类号： H01J17/26 ,  H01J61/28 ,  H01J61/30 ,  H01J61/54 ,  H01J61/92 ,  H01T1/10 ,  H01T1/20 ,  H01T4/12

摘要： A flat gas discharge tube (GDT) device includes a first insulator substrate 102 having first and second sides and defining an opening. The GDT device further includes second and third insulator substrates 104, 106 mounted to the first and second sides of the first insulator substrate, respectively, such that inward facing surfaces of the second and third insulator substrates and the opening of the first insulator substrate define a chamber. The GDT device further includes first and second electrodes 114,116 implemented on the respective inward facing surfaces of the second and third insulator substrates, and first and second terminals 124 implemented on at least one external surface of the GDT device. The GDT device further includes electrical connections implemented between the first and second electrodes and the first and second terminals, respectively. The electrical connections include a first internal via 152 that extends through the second insulator substrate and configured to provide the electrical connection between the first electrode and the first terminal, and a second internal via 166,162 that extends through the third insulator substrate and configured to provide at least some of the electrical connection between the second electrode and the second terminal.

公开(公告)号：EP3644340A2

公开(公告)日：2020-04-29

申请号：EP19214078.8

申请日：2016-03-17

申请人： Bourns, Inc.

发明人： HEATH, Jan ,  BOURNS, Gordan L

IPC分类号： H01J17/26 ,  H01J61/28 ,  H01J61/30 ,  H01J61/54 ,  H01J61/92 ,  H01T1/10 ,  H01T1/20 ,  H01T4/12

摘要： A flat gas discharge tube (GDT) device includes a first insulator substrate 102 having first and second sides and defining an opening. The GDT device further includes second and third insulator substrates 104, 106 mounted to the first and second sides of the first insulator substrate, respectively, such that inward facing surfaces of the second and third insulator substrates and the opening of the first insulator substrate define a chamber. The GDT device further includes first and second electrodes 114,116 implemented on the respective inward facing surfaces of the second and third insulator substrates, and first and second terminals 124 implemented on at least one external surface of the GDT device. The GDT device further includes electrical connections implemented between the first and second electrodes and the first and second terminals, respectively. The electrical connections include a first internal via 152 that extends through the second insulator substrate and configured to provide the electrical connection between the first electrode and the first terminal, and a second internal via 166,162 that extends through the third insulator substrate and configured to provide at least some of the electrical connection between the second electrode and the second terminal.