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1.发明授权PROCEDE DE FORMATION DE COUCHE DE CARBURE DE SILICIUM OU DE NITRURE D ELEMENT III SUR UN SUBSTRAT ADAPTE 有权方法制备碳化硅层或第III族氮化物衬底安装到
公开(公告)号：EP1476898B1
公开(公告)日：2005-12-28
申请号：EP03718870.3
申请日：2003-02-13
发明人： LEYCURAS, André
CPC分类号： C30B25/18 , C30B25/02 , C30B29/36 , H01L21/02381 , H01L21/02447 , H01L21/0254
摘要： The invention relates to an intermediate product in the production of optical, electronic or opto-electronic components, comprising a crystalline layer of cubic silicon carbide, or of a nitride of an element of group III, such as AlN, InN or GaN on a monocrystalline substrate. The substrate is made from silicon/germanium, the germanium being of an atomic proportion of from 5 to 90 % inclusive.
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公开(公告)号：EP1049820B1
公开(公告)日：2003-08-20
申请号：EP99956144.2
申请日：1999-11-25
发明人： LEYCURAS, André
CPC分类号： C30B25/105 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/12 , C30B19/00 , C30B29/36 , C30B29/38
摘要： The invention concerns a method for epitaxial growth of a material on a first solid material (100) from a material melting on the first material (100), characterised in that it comprises: a step (a) of growth of the first material (100) on a substrate (10), made of a second material (200); a step (d, d') whereby crystalline tips of the first material (100) are made to grow from the contact surface between the first material (100) and the melting material; a step (f, f') which consists in causing crystals to grow laterally from the crystalline tips in a plane parallel to that of the free surface of the melting material.
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公开(公告)号：EP1049813B1
公开(公告)日：2006-08-23
申请号：EP99956143.4
申请日：1999-11-25
发明人： LEYCURAS, André
CPC分类号： C30B25/105 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/12 , C30B19/00 , C30B29/36 , C30B29/38
摘要： The invention concerns a method for chemical vapour deposition of coats of a material on a substrate (10) extending globally in a plane, comprising: a step which consists in arranging the substrate (10) in a conduit (6) made of a refractory material and swept by the gas components required for deposition, said conduit (6) being interposed between the substrate (10) and first (8) and second (9) heating means, located on either side of the substrate (10) plane, characterised in that it further comprises a step which consists in heating the substrate (10) by the thermal radiation from the conduit (10) which is itself heated by the first (8) and second (9) heating means.
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公开(公告)号：EP1049820B9
公开(公告)日：2004-07-14
申请号：EP99956144.2
申请日：1999-11-25
发明人： LEYCURAS, André
CPC分类号： C30B25/105 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/12 , C30B19/00 , C30B29/36 , C30B29/38
摘要： The invention concerns a method for epitaxial growth of a material on a first solid material (100) from a material melting on the first material (100), characterised in that it comprises: a step (a) of growth of the first material (100) on a substrate (10), made of a second material (200); a step (d, d') whereby crystalline tips of the first material (100) are made to grow from the contact surface between the first material (100) and the melting material; a step (f, f') which consists in causing crystals to grow laterally from the crystalline tips in a plane parallel to that of the free surface of the melting material.
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