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    NANOSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME
    3.
    发明授权
    NANOSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME 有权
    性纳米结构及其制备方法

    公开(公告)号：EP1525339B1

    公开(公告)日：2016-03-16

    申请号：EP03738327.0

    申请日：2003-07-08

    申请人： QuNano AB

    发明人： SAMUELSON, Lars, Ivar ,  OHLSSON, Jonas, Björn

    IPC分类号： C30B11/12 ,  C30B29/40 ,  C30B29/60

    CPC分类号： H01L31/035227 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B25/00 ,  C30B25/02 ,  C30B25/14 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/20 ,  H01L29/66318 ,  H01L29/7371 ,  H01L29/882 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/068 ,  H01L33/04 ,  Y02E10/547 ,  Y10S977/762 ,  Y10S977/763

    摘要： A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. Thus a resonant tunneling diode comprises a nanowhisker having a seed particle melt at one end, and a column of a constant diameter with a nanometer dimension, such as to exhibit quantum confinement effects, the column comprising first and second semiconductor portions comprising respectively an emitter and a collector, and, disposed between the first and second semiconductor portions, third and fourth portions of material having a different band gap from that of the first and second semiconductor portions, and a fifth central portion of a semiconductor material having a different band gap from that of the third and fourth portions, disposed between the third and fourth portions and forming a quantum weil. The RTD is made by a method including depositing a seed particle on a substrate, and exposing the seed particle to materials under controlled conditions of temperature and pressure such as to form a melt with the seed particle, so that the seed particle rises on top of a column whereby to form a nanowhisker, the column of the nanowhisker having a constant diameter of a nanometer dimension; during the growth of the column, selectively changing the compositions of said gases whereby to abruptly change the composition of the material of the column at regions along its length, whilst retaining epitaxial growth, wherein lattice mismatch between the materials of the portions is accommodated by radial outward bulging of the whisker at the boundaries.

    VERFAHREN ZUR HERSTELLUNG UND AUSRICHTUNG VON NANOWIRES UND ANWENDUNGEN EINES SOLCHEN VERFAHRENS
    5.
    发明公开
    VERFAHREN ZUR HERSTELLUNG UND AUSRICHTUNG VON NANOWIRES UND ANWENDUNGEN EINES SOLCHEN VERFAHRENS 有权
    方法用于生产和对准纳米线，而该等程序中的应用

    公开(公告)号：EP2748107A1

    公开(公告)日：2014-07-02

    申请号：EP12750327.4

    申请日：2012-08-20

    申请人： ETH Zürich

    发明人： ALBUSCHIES Jörg

    IPC分类号： B82Y10/00

    CPC分类号： G01N27/04 ,  B81B7/0006 ,  B81B2201/0214 ,  B81C1/00087 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/12 ,  C30B29/06 ,  C30B29/60 ,  G01N33/483 ,  G01N33/48721

    摘要： The invention relates, inter alia, to a method for producing a conductor structure, comprising at least one silicon nanowire (4) having a diameter of less than 50 nm, which nanowire is contacted via at least two points by electrodes (11, 13, 30), and wherein the at least one nanowire (4) and the electrodes (11, 13, 30) are arranged on one plane on a substrate (1, 5), which is characterized in that a) catalytically active metal nanoparticles having a diameter in the range of 0.5-50 nm are deposited on the surface (2) of an insulating substrate (1), b) the surface and the metal nanoparticles deposited thereon are exposed to a gas flow containing at least one gaseous silicon component at a temperature in the range of 300-1100 ºC and during a time period in the range of 10-200 minutes, wherein at least one nanowire (4) of a length in the range of 5-200 μm projecting from the substrate is formed, c) said at least one nanowire (4) projecting from the surface of the substrate (1) is deposited in one plane with one of the contact surfaces (6) corresponding to the surface (2) of the insulating substrate (1) by applying a secondary substrate (5), and d) either the at least one nanowire (4) deposited on the insulating substrate (1) is contacted at two different points by electrodes (11, 13, 30) or the at least one nanowire adhering to the secondary substrate (5) is contacted at two different points by electrodes (11, 13, 30).

    摘要翻译： 该方法包括在10-200分钟的时间段暴露绝缘基板（1）和金属纳米颗粒的表面（2）在绝缘基板的表面上，以气流含有的300-1100 [度] C的温度的气态硅成分。 甲硅纳米线（4）与长度5-200微米从绝缘基板表面突出的在一个平面内通过接触辅基板（5）与绝缘基板的接触面（6）提供。 上绝缘基板或纳米线秉承次衬底的纳米线在由电极的两个不同的点被接触。 按电极，其具有经由两个点的小于50nm直径的硅纳米线。 所述纳米线和电极被布置在一个平面上在基片上。 在0.5-50纳米范围内具有直径催化活性的金属纳米颗粒被沉积在基板上的表面到绝缘的。 含有金属纳米粒子的溶液wässrige做熊如胶体，具有直径在0.5-500纳米的范围内，被施加到光致抗蚀剂。 用合适的溶剂中的漆：如丙酮被去除，当溶液蒸发。 催化剂颗粒的金属纳米颗粒：如金纳米颗粒，其直径在1-20纳米范围内的硅树脂基的基片被形成在5-500纳米范围内具有厚度的单晶硅层。 独立权利要求中包括了以下内容：对于干化学生产结晶基板的凹部（1）的方法; （2）用于制备传感器元件，用于测定分子特性的方法; 如使用所述传感器元件的DNA分子;和（3），用于测量长链分子的特性的方法。