公开(公告)号：EP2338168A4

公开(公告)日：2013-06-12

申请号：EP09822395

申请日：2009-09-29

申请人： FREESCALE SEMICONDUCTOR INC

发明人： HERRICK MATTHEW T ,  CHANG KO-MIN ,  CHINDALORE GOWRISHANKAR L ,  KANG SUNG-TAEG

IPC分类号： H01L21/8247 ,  H01L21/28 ,  H01L21/336 ,  H01L27/115 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  H01L21/28282 ,  H01L27/11526 ,  H01L27/11536 ,  H01L27/11543 ,  H01L27/11573 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

公开(公告)号：EP1997132A4

公开(公告)日：2009-04-29

申请号：EP07797138

申请日：2007-02-22

申请人： FREESCALE SEMICONDUCTOR INC

发明人： LI CHI NAN BRIAN ,  CHANG KO-MIN ,  HONG CHEONG M

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/7923 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7887

摘要： A method for forming a semiconductor device (10) includes providing a semiconductor substrate (12) comprising silicon, forming a layer of dielectric (14) on the surface of the semiconductor substrate, forming a gate electrode (16) comprising silicon over the layer of dielectric, recessing the layer of dielectric under the gate electrode, filling the recess (19) with a discrete charge storage material (24 or 54), oxidizing a portion (30) of the gate electrode, and oxidizing (21) a portion of the semiconductor substrate.