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公开(公告)号：EP0540312B1
公开(公告)日：1996-04-17
申请号：EP92309877.6
申请日：1992-10-28
IPC分类号： H01L23/485 , H01L29/06
CPC分类号： H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L29/0657 , H01L2224/0401 , H01L2224/05567 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/05042 , H01L2924/10157 , H01L2924/14 , H01L2924/30105
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公开(公告)号：EP0484887A2
公开(公告)日：1992-05-13
申请号：EP91118848.0
申请日：1991-11-05
发明人： Amano, Akira, c/o Fuji Electric Co., Ltd. , Shindo, Yoichi, c/o Fuji Electric Co., Ltd. , Suganuma, Nobutaka, c/o Fuji Electric Co., Ltd. , Nakata, Katsue, c/o Fuji Electric Co., Ltd.
IPC分类号： H01S3/025
CPC分类号： H01L33/44 , G11B7/0908 , G11B7/123 , G11B7/127 , G11B7/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01S5/02212 , H01S5/02228 , H01S5/02244 , H01S5/0283 , H01L2924/00014 , H01L2924/00
摘要： A laser diode in which a laser diode chip (111) having a light-emitting end face (33) is resin-encapsulated by means of an encapsulating resin layer (10) constituted by an epoxy-based resin or the like. An end-face-breakage preventing layer (10) formed of a silicon-based resin having a high coefficient of light absorption in the wavelength band of a laser beam and a high bond energy is formed on the light-emitting end face (33). The end-face-breakage preventing layer (10) has a thickness of approximately 20 to 30 µm.
摘要翻译： 其中具有发光端面（33）的激光二极管芯片（111）通过由环氧类树脂等构成的封装树脂层（10）进行树脂封装的激光二极管。 在发光端面（33）上形成由激光束的波长带中的高吸收系数的硅系树脂形成的端面破损防止层（10）和高的结合能， 。 端面破损层（10）的厚度为20〜30μm左右。
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3.发明公开
公开(公告)号：EP0598343A3
公开(公告)日：1995-01-11
申请号：EP93118292.7
申请日：1993-11-11
发明人： Amano, Akira, c/o Fuji Electric Co., Ltd. , Matsuzaki, Kazuo, c/o Fuji Electric Co., Ltd. , Sakai, Toshiaki, c/o Fuji Electric Co., Ltd.
CPC分类号： G01D5/48 , G01L1/005 , G01L11/00 , G01P15/0894 , H01L2224/45144 , H01L2224/48091 , H01L2924/12032 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A force sensor comprises a substrate having a movable unit which is displaceable in response to one of an applied force and acceleration; an electron emission unit having a cathode for emitting electrons in accordance with an applied potential; an electron absorption unit having an anode for capturing electrons emitted from the cathode, the electron emission unit and the electron absorption unit being formed on a surface of the substrate; and a control unit for, on the basis of the displacement of the movable unit, controlling the electron capturing efficiency of the anode with respect to electrons emitted from the cathode.
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4.发明公开Bump electrode structure and semiconductor chip having the same 失效Höckerelektrodenstrukturund Halbleiterchip mit dieser Struktur。
公开(公告)号：EP0540312A1
公开(公告)日：1993-05-05
申请号：EP92309877.6
申请日：1992-10-28
IPC分类号： H01L23/485 , H01L29/06
CPC分类号： H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L29/0657 , H01L2224/0401 , H01L2224/05567 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/05042 , H01L2924/10157 , H01L2924/14 , H01L2924/30105
摘要： A concave portion (21) having a V-shaped cross section is dug in a semiconductor region (10) of a chip, and a surface of the semiconductor region inclusive of the concave portion (21) is covered with an insulation film (22). A wiring film (23) connected to an integrated circuit device is disposed on the insulation film. A protection film (24) covering the surface of the chip is provided with a window (24a) to expose the concave portion and a portion of the wiring film. The window is covered with a thin metal subbing film (25) connected to the wiring film. A metal protrusion (26) for a bump electrode (20) is provided by an electroplating process so as to protrude from the concave portion.
摘要翻译： 在芯片的半导体区域（10）中挖出具有V形截面的凹部（21），并且包括凹部（21）的半导体区域的表面被绝缘膜（22）覆盖， 。 连接到集成电路器件的布线膜（23）设置在绝缘膜上。 覆盖芯片表面的保护膜（24）设置有窗口（24a），以露出凹部和布线膜的一部分。 窗口被连接到布线膜的薄金属薄膜（25）覆盖。 用于凸起电极（20）的金属突起（26）通过电镀工艺设置成从凹部突出。
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5.发明授权
公开(公告)号：EP0484887B1
公开(公告)日：1996-04-03
申请号：EP91118848.0
申请日：1991-11-05
发明人： Amano, Akira, c/o Fuji Electric Co., Ltd. , Shindo, Yoichi, c/o Fuji Electric Co., Ltd. , Suganuma, Nobutaka, c/o Fuji Electric Co., Ltd. , Nakata, Katsue, c/o Fuji Electric Co., Ltd.
IPC分类号： H01S3/025
CPC分类号： H01L33/44 , G11B7/0908 , G11B7/123 , G11B7/127 , G11B7/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01S5/02212 , H01S5/02228 , H01S5/02244 , H01S5/0283 , H01L2924/00014 , H01L2924/00
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6.发明公开
公开(公告)号：EP0484887A3
公开(公告)日：1992-05-27
申请号：EP91118848.0
申请日：1991-11-05
发明人： Amano, Akira, c/o Fuji Electric Co., Ltd. , Shindo, Yoichi, c/o Fuji Electric Co., Ltd. , Suganuma, Nobutaka, c/o Fuji Electric Co., Ltd. , Nakata, Katsue, c/o Fuji Electric Co., Ltd.
IPC分类号： H01S3/025
CPC分类号： H01L33/44 , G11B7/0908 , G11B7/123 , G11B7/127 , G11B7/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01S5/02212 , H01S5/02228 , H01S5/02244 , H01S5/0283 , H01L2924/00014 , H01L2924/00
摘要： A laser diode in which a laser diode chip (111) having a light-emitting end face (33) is resin-encapsulated by means of an encapsulating resin layer (10) constituted by an epoxy-based resin or the like. An end-face-breakage preventing layer (10) formed of a silicon-based resin having a high coefficient of light absorption in the wavelength band of a laser beam and a high bond energy is formed on the light-emitting end face (33). The end-face-breakage preventing layer (10) has a thickness of approximately 20 to 30 µm.
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7.发明授权Force sensor, temperature sensor and temperature/force sensor device with lateral electron cold emission 失效力传感器，温度传感器和温度/电源转换器装置与横向冷电子发射
公开(公告)号：EP0598343B1
公开(公告)日：2000-03-01
申请号：EP93118292.7
申请日：1993-11-11
发明人： Amano, Akira, c/o Fuji Electric Co., Ltd. , Matsuzaki, Kazuo, c/o Fuji Electric Co., Ltd. , Sakai, Toshiaki, c/o Fuji Electric Co., Ltd.
CPC分类号： G01D5/48 , G01L1/005 , G01L11/00 , G01P15/0894 , H01L2224/45144 , H01L2224/48091 , H01L2924/12032 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
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8.发明公开Force sensor, temperature sensor and temperature/force sensor device 失效Kraftwandler，Temperaturwandler und Temperatur / Kraft Wandlervorrichtung。
公开(公告)号：EP0598343A2
公开(公告)日：1994-05-25
申请号：EP93118292.7
申请日：1993-11-11
发明人： Amano, Akira, c/o Fuji Electric Co., Ltd. , Matsuzaki, Kazuo, c/o Fuji Electric Co., Ltd. , Sakai, Toshiaki, c/o Fuji Electric Co., Ltd.
CPC分类号： G01D5/48 , G01L1/005 , G01L11/00 , G01P15/0894 , H01L2224/45144 , H01L2224/48091 , H01L2924/12032 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A force sensor comprises a substrate having a movable unit which is displaceable in response to one of an applied force and acceleration; an electron emission unit having a cathode for emitting electrons in accordance with an applied potential; an electron absorption unit having an anode for capturing electrons emitted from the cathode, the electron emission unit and the electron absorption unit being formed on a surface of the substrate; and a control unit for, on the basis of the displacement of the movable unit, controlling the electron capturing efficiency of the anode with respect to electrons emitted from the cathode.
摘要翻译： 力传感器包括具有可移动单元的基板，所述可移动单元可响应于施加的力和加速度之一而移动; 具有根据施加电位发射电子的阴极的电子发射单元; 电子吸收单元，其具有用于捕获从阴极发射的电子的阳极，电子发射单元和电子吸收单元形成在基板的表面上; 以及控制单元，用于根据可移动单元的位移来控制阳极相对于从阴极发射的电子的电子捕获效率。
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