Micro structure, cantilever, scanning probe microscope and a method for measuring deformation quantity for the micro structure
    1.
    发明公开
    Micro structure, cantilever, scanning probe microscope and a method for measuring deformation quantity for the micro structure 审中-公开
    微观结构,悬臂,扫描探针显微镜和方法,用于测量变形量为微结构

    公开(公告)号:EP1731895A2

    公开(公告)日:2006-12-13

    申请号:EP06011705.8

    申请日:2006-06-07

    申请人: TDK Corporation

    IPC分类号: G01N13/16 G12B21/08 G12B21/02

    CPC分类号: G01P15/0894 G01Q20/04

    摘要: It is desired that highly efficient and highly sensitive sensors being extremely small size is provided in desired position, desired shape and size for a micro structure that causes the elastic deformation at least a part thereof. Moreover, it is also required that facilitating to assemble and adjust the components, miniaturizing and simplifying the detection circuit, and measuring a local displacement of a fine part of the micro structure.
    The disclosing micro structure is cantilever 1 which beam part 14 causes the elastic deformation. This cantilever 1 is provided with a sensor 12 detecting elastic deformation of beam part 14 by tunneling effect.

    摘要翻译: 它是高效率的和期望的那样高灵敏度的传感器是极为被在所需的位置,所希望的形状和尺寸提供小尺寸的微结构没有使弹性变形至少其一部分。 更过来,这因此需要组装并促进和调节部件,小型化和简化检测电路,以及测量所述微结构的微细部分的局部位移。 该公开的微结构是悬臂梁1哪部分14使弹性变形。 这个悬臂1设置有通过隧道效应探测光束部14的弹性变形的传感器12。

    TUNNELING SENSOR WITH LINEAR FORCE REBALANCE
    4.
    发明公开
    TUNNELING SENSOR WITH LINEAR FORCE REBALANCE 失效
    TUNNELEFFEKTMESSAUFNEHMER MIT LINEARERKRAFTRÜCKKOPPLUNG

    公开(公告)号:EP0917652A4

    公开(公告)日:1999-12-01

    申请号:EP97936467

    申请日:1997-08-08

    摘要: A tunneling sensor (10) has a pair of force rebalance capacitors in a push-pull relationship to provide a rebalance force that is a linear function of applied rebalance voltages, which provides an output voltage linearly related to the input acceleration. The tunneling sensor comprises plate electrode (12) attached to a silicon substrate (14) by a pair of torsional flexures (16) providing an axis of rotation for the plate electrode. A pendulous mass (18) is formed on a first end of the plate electrode, and a tunnel-effect contact (20) is formed on a second end of the plate electrode. A pair of torque rebalance bridge electrodes (22) are formed on the substrate and span the plate electrode. A tunnel-effect tip (24) is formed proximate the tunnel-effect contact and in-line with the rotational path of the tunnel-effect contact (2) when the plate electrode is rotated.

    摘要翻译: 隧穿传感器(10)具有一对推挽关系的力再平衡电容器,以提供再平衡力,该再平衡力是施加的再平衡电压的线性函数,其提供与输入加速度线性相关的输出电压。 隧道传感器包括通过一对提供板电极的旋转轴的扭转挠曲件(16)附接到硅衬底(14)的板电极(12)。 在平板电极的第一端上形成摆质量(18),并且在平板电极的第二端上形成隧道效应触点(20)。 一对扭矩重新平衡桥电极(22)形成在基板上并跨越平板电极。 当平板电极旋转时,隧道效应尖端(24)形成在隧道效应触点附近并且与隧道效应触点(2)的旋转路径同轴。

    EP0880671A4 -
    5.
    发明公开
    EP0880671A4 - 失效
    CN101684841A - Google专利

    公开(公告)号:EP0880671A4

    公开(公告)日:1998-12-02

    申请号:EP96924568

    申请日:1996-07-19

    摘要: A torsional cantilever is microfabricated for reduced size to increase its resonance frequency, increase its scanning speed, and permit fabrication of large numbers in an array to provide parallel scanning. The cantilever may incorporate a tip for highly sensitive force detection. The device preferably includes a cantilever arm and a counterbalance mounted on opposite sides of a laterally extending torsional beam fixed at its outer ends. Sensors detect rotation of the cantilever arm and may provide control of sensor locator through a feedback loop.

    摘要翻译: 扭转悬臂(10)是微型制造的减小尺寸,以增加其共振频率,提高其扫描速度,并允许在阵列中制造大量数据以提供平行扫描。 悬臂(10)可以包含用于高灵敏力检测的尖端(23)。 装置(10)优选地包括悬臂(12)和安装在横向延伸的扭转梁(16)的相对侧上的平衡件(26),所述扭转梁固定在其外端。 传感器(54,54')检测悬臂的旋转并且可以通过反馈回路提供对传感器定位器的控制。

    MESSVORRICHTUNG, HERSTELLUNGSVERFAHREN ZUM HERSTELLEN EINER MESSVORRICHTUNG UND VERFAHREN ZUM BETREIBEN EINER MESSVORRICHTUNG
    7.
    发明公开
    MESSVORRICHTUNG, HERSTELLUNGSVERFAHREN ZUM HERSTELLEN EINER MESSVORRICHTUNG UND VERFAHREN ZUM BETREIBEN EINER MESSVORRICHTUNG 审中-公开
    测量装置,制造方法测量装置和运行方法的测量设备

    公开(公告)号:EP2927698A1

    公开(公告)日:2015-10-07

    申请号:EP15158132.9

    申请日:2015-03-09

    申请人: ROBERT BOSCH GMBH

    IPC分类号: G01P15/08 G01P15/13

    摘要: Die Erfindung betrifft eine Messvorrichtung (100) zum Messen einer physikalischen Größe. Die Messvorrichtung (100) umfasst ein Messelement (102), das ein elektrisch leitfähiges Material aufweist, eine Sensiermasse (104), die zumindest teilweise ein elektrisch leitfähiges Material aufweist, wobei die Sensiermasse (104) ausgebildet ist, um ansprechend auf eine Krafteinwirkung relativ zu dem Messelement (102) bewegt zu werden, und eine Auswerteeinheit, die ausgebildet ist, um unter Verwendung eines von einer Position des Messelements (102) gegenüber der Sensiermasse (104) und/oder von einem elektrischen Stromfluss durch das Messelement (102) abhängigen Tunnelstroms (108) eine physikalische Größe der Krafteinwirkung auf die Sensiermasse (104) zu bestimmen.

    摘要翻译: 本发明涉及一种用于测量物理量的测量装置(100)。 的测量装置(100)包括具有导电材料,Sensiermasse(104)至少部分地包括导电材料的测量构件(102),所述Sensiermasse(104)被适配为响应相对于力 测量元件被移动(102),以及使用该Sensiermasse相对的感测元件(102)的位置中的一个,其适于在从属的评估单元(104)和/或通过所述感测元件的电流流动(102)的隧道电流 (108)来确定作用于Sensiermasse(104)的力的物理尺寸。

    A TUNNELING SENSOR OR SWITCH AND A METHOD OF MAKING SAME
    8.
    发明公开
    A TUNNELING SENSOR OR SWITCH AND A METHOD OF MAKING SAME 审中-公开
    一种隧道传感器或开关及其制造方法

    公开(公告)号:EP1305257A2

    公开(公告)日:2003-05-02

    申请号:EP01957352.6

    申请日:2001-07-30

    摘要: A method of making a micro electo-mechanical switch or tunneling sensor. A cantilevered beamstructure and a mating structure are defined on an etch stop layer on a first substrate or wafer;and at least one contact structure and a mating structure are defined on a second substrate orwafer, the mating structure on the second substrate or wafer being of a complementary shape tothe mating structure on the first substrate or wafer. A bonding layer, preferably a eutecticbonding layer, is provided on at least one of the mating structures. The mating structure of thefirst substrate is moved into a confronting relationship with the mating structure of the secondsubstrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer and the etch stop layer are removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

    摘要翻译: 一种制造微电子机械开关或隧道传感器的方法。 悬臂梁结构和配合结构被限定在第一衬底或晶片上的蚀刻停止层上;并且至少一个接触结构和配合结构被限定在第二衬底或晶片上,第二衬底或晶片上的配合结构为 与第一衬底或晶片上的配合结构形成互补形状。 在至少一个配合结构上提供结合层,优选共晶结合层。 第一衬底的配合结构移动到与二衬底或晶片的配合结构成面对关系。 在两个衬底之间施加压力,以便在键合或共晶层处的两个配合结构之间引起键合。 然后去除第一衬底或晶片和蚀刻停止层以释放悬臂梁结构以相对于第二衬底或晶片移动。

    A MEM GYROSCOPE AND A METHOD OF MAKING SAME
    9.
    发明公开
    A MEM GYROSCOPE AND A METHOD OF MAKING SAME 审中-公开
    MEM陀螺仪和方法生产同样

    公开(公告)号:EP1305256A2

    公开(公告)日:2003-05-02

    申请号:EP01959532.1

    申请日:2001-07-31

    IPC分类号: B81B1/00

    摘要: A method of making a micro electro-mechanical gyroscope. A cantilevered beam structure, firstportions of side drive electrodes and a mating structure are defined on a first substrate or wafer;and at least one contact structure, second portions of the side drive electrodes and a matingstructure are defined on a second substrate or wafer, the mating structure on the second substrateor wafer being of a complementary shape to the mating structure on the first substrate or waferand the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The matingstructure of the first substrate is moved into a confronting relationship with the mating structureof the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and alsobetween the first and second portions of the side drive electrodes to cause a bond to occurtherebetween. Then the first substrate or wafer is removed to free the cantilevered beam structurefor movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.