摘要:
It is desired that highly efficient and highly sensitive sensors being extremely small size is provided in desired position, desired shape and size for a micro structure that causes the elastic deformation at least a part thereof. Moreover, it is also required that facilitating to assemble and adjust the components, miniaturizing and simplifying the detection circuit, and measuring a local displacement of a fine part of the micro structure. The disclosing micro structure is cantilever 1 which beam part 14 causes the elastic deformation. This cantilever 1 is provided with a sensor 12 detecting elastic deformation of beam part 14 by tunneling effect.
摘要:
The dynamic quantity sensor includes an electrically insulating substance layer and at least one pair of electrodes contacting the electrically insulating substance layer, wherein a plurality of conductive particles are dispersed in the electrically insulating substance layer so that a tunnel current flows when a voltage is applied between the at least one pair of electrodes, and a dynamic quantity relating to a distance between the conductive particles is detected based on the tunnel current.
摘要:
Diamond microtip field emitters (25) are fabricated for use in diode and triode vacuum microelectronic devices, sensors and displays. Ultra-sharp emitter tips are formed in a fabrication process in which diamond is deposited into mold cavities in a two step deposition sequence. During deposition of the diamond, the graphite content is carefully controlled to enhance emission performance. The tips or the emitters (25) may be treated by post fabrication processes, such as sharpening or doping with gold.
摘要:
A tunneling sensor (10) has a pair of force rebalance capacitors in a push-pull relationship to provide a rebalance force that is a linear function of applied rebalance voltages, which provides an output voltage linearly related to the input acceleration. The tunneling sensor comprises plate electrode (12) attached to a silicon substrate (14) by a pair of torsional flexures (16) providing an axis of rotation for the plate electrode. A pendulous mass (18) is formed on a first end of the plate electrode, and a tunnel-effect contact (20) is formed on a second end of the plate electrode. A pair of torque rebalance bridge electrodes (22) are formed on the substrate and span the plate electrode. A tunnel-effect tip (24) is formed proximate the tunnel-effect contact and in-line with the rotational path of the tunnel-effect contact (2) when the plate electrode is rotated.
摘要:
A torsional cantilever is microfabricated for reduced size to increase its resonance frequency, increase its scanning speed, and permit fabrication of large numbers in an array to provide parallel scanning. The cantilever may incorporate a tip for highly sensitive force detection. The device preferably includes a cantilever arm and a counterbalance mounted on opposite sides of a laterally extending torsional beam fixed at its outer ends. Sensors detect rotation of the cantilever arm and may provide control of sensor locator through a feedback loop.
摘要:
The dynamic quantity sensor includes an electrically insulating substance layer and at least one pair of electrodes contacting the electrically insulating substance layer, wherein a plurality of conductive particles are dispersed in the electrically insulating substance layer so that a tunnel current flows when a voltage is applied between the at least one pair of electrodes, and a dynamic quantity relating to a distance between the conductive particles is detected based on the tunnel current.
摘要:
Die Erfindung betrifft eine Messvorrichtung (100) zum Messen einer physikalischen Größe. Die Messvorrichtung (100) umfasst ein Messelement (102), das ein elektrisch leitfähiges Material aufweist, eine Sensiermasse (104), die zumindest teilweise ein elektrisch leitfähiges Material aufweist, wobei die Sensiermasse (104) ausgebildet ist, um ansprechend auf eine Krafteinwirkung relativ zu dem Messelement (102) bewegt zu werden, und eine Auswerteeinheit, die ausgebildet ist, um unter Verwendung eines von einer Position des Messelements (102) gegenüber der Sensiermasse (104) und/oder von einem elektrischen Stromfluss durch das Messelement (102) abhängigen Tunnelstroms (108) eine physikalische Größe der Krafteinwirkung auf die Sensiermasse (104) zu bestimmen.
摘要:
A method of making a micro electo-mechanical switch or tunneling sensor. A cantilevered beamstructure and a mating structure are defined on an etch stop layer on a first substrate or wafer;and at least one contact structure and a mating structure are defined on a second substrate orwafer, the mating structure on the second substrate or wafer being of a complementary shape tothe mating structure on the first substrate or wafer. A bonding layer, preferably a eutecticbonding layer, is provided on at least one of the mating structures. The mating structure of thefirst substrate is moved into a confronting relationship with the mating structure of the secondsubstrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer and the etch stop layer are removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.
摘要:
A method of making a micro electro-mechanical gyroscope. A cantilevered beam structure, firstportions of side drive electrodes and a mating structure are defined on a first substrate or wafer;and at least one contact structure, second portions of the side drive electrodes and a matingstructure are defined on a second substrate or wafer, the mating structure on the second substrateor wafer being of a complementary shape to the mating structure on the first substrate or waferand the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The matingstructure of the first substrate is moved into a confronting relationship with the mating structureof the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and alsobetween the first and second portions of the side drive electrodes to cause a bond to occurtherebetween. Then the first substrate or wafer is removed to free the cantilevered beam structurefor movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.