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1.发明公开Method of forming a single-crystal semiconductor film on an amorphous insulator 失效在非晶绝缘体上形成单晶半导体膜的方法
公开(公告)号：EP0071471A3
公开(公告)日：1985-05-15
申请号：EP82303986
申请日：1982-07-28
申请人： FUJITSU LIMITED
发明人： Kawamura, Seiichiro
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , Y10S117/904 , Y10T117/108 , Y10T117/1088
摘要： A large single-crystalline film (13) is formed on an amorphous insulator by high energy beam annealing. The crystal growth of a molten polycrystalline or amorphous film (11) on the insulator is controlled to occur from the central region towards the outside of the molten zone (12) produced by scanning the beam. This control is accomplished by using, for example, a doughnut-shaped laser beam, which may be scanned a plurality of times (X,Y) to produce a wider film.
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2.发明公开Method of producing a semiconductor device comprising a plurality of recrystallized monocrystal regions 失效一种用于与多数再结晶单晶区的制造半导体装置的过程。
公开(公告)号：EP0084265A2
公开(公告)日：1983-07-27
申请号：EP82306973.7
申请日：1982-12-24
申请人： FUJITSU LIMITED
IPC分类号： H01L21/20 , H01L21/268 , H01L21/263
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/76264 , H01L21/76272
摘要： A method for producing a semiconductor device comprising the steps of: forming an insulating layer on a substrate, said insulating layer having a plurality of concave portions respectively including a concave; forming a non-single crystalline silicon layer on a surface of said insulating layer; patterning said non-single crystalline silicon layer so that each concave portion is independently melting and flowing said patterned non-single crystalline silicon layer into said concave to form a single crystalline region in said concave by an irradiation with an energy ray; and forming a semiconductor element in said single crystalline region.
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3.发明授权Method of producing a semiconductor device comprising a plurality of recrystallized monocrystal regions 失效生产包含多重重结晶单晶区域的半导体器件的方法
公开(公告)号：EP0084265B1
公开(公告)日：1988-03-16
申请号：EP82306973.7
申请日：1982-12-24
申请人： FUJITSU LIMITED
IPC分类号： H01L21/20 , H01L21/268 , H01L21/263
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/76264 , H01L21/76272
摘要： A method for producing a semiconductor device including the steps of forming an insulating layer on a substrate, the insulating layer having a plurality of concave portions, forming a non-single crystalline silicon layer on the surface of the insulating layer. The non-single crystalline silicon is patterned so that each concave portion is independently melted and the patterned non-single crystalline silicon layer flows into each of the concave portions to form a single crystalline region by irradiation with an energy ray; and, a semiconductor element is also formed in the single crystalline region.
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4.发明公开
公开(公告)号：EP0084265A3
公开(公告)日：1985-04-17
申请号：EP82306973
申请日：1982-12-24
申请人： FUJITSU LIMITED
IPC分类号： H01L21/20 , H01L21/268 , H01L21/263
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/76264 , H01L21/76272
摘要： A method for producing a semiconductor device comprising the steps of: forming an insulating layer on a substrate, said insulating layer having a plurality of concave portions respectively including a concave; forming a non-single crystalline silicon layer on a surface of said insulating layer; patterning said non-single crystalline silicon layer so that each concave portion is independently melting and flowing said patterned non-single crystalline silicon layer into said concave to form a single crystalline region in said concave by an irradiation with an energy ray; and forming a semiconductor element in said single crystalline region.
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5.发明授权Method of forming a single-crystal semiconductor film on an amorphous insulator 失效在非晶绝缘体上形成单晶半导体膜的方法
公开(公告)号：EP0071471B1
公开(公告)日：1987-10-14
申请号：EP82303986.2
申请日：1982-07-28
申请人： FUJITSU LIMITED
发明人： Kawamura, Seiichiro
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , Y10S117/904 , Y10T117/108 , Y10T117/1088
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6.发明公开Method of forming a single-crystal semiconductor film on an amorphous insulator 失效一种用于在一种非晶形绝缘体制造单晶半导体层的过程。
公开(公告)号：EP0071471A2
公开(公告)日：1983-02-09
申请号：EP82303986.2
申请日：1982-07-28
申请人： FUJITSU LIMITED
发明人： Kawamura, Seiichiro
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , Y10S117/904 , Y10T117/108 , Y10T117/1088
摘要： A large single-crystalline film (13) is formed on an amorphous insulator by high energy beam annealing. The crystal growth of a molten polycrystalline or amorphous film (11) on the insulator is controlled to occur from the central region towards the outside of the molten zone (12) produced by scanning the beam. This control is accomplished by using, for example, a doughnut-shaped laser beam, which may be scanned a plurality of times (X,Y) to produce a wider film.
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