-
1.发明公开METHOD FOR PRODUCING CERIUM OXIDE, CERIUM OXIDE ABRASIVE, METHOD FOR POLISHING SUBSTRATE USING THE SAME AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权PROCESS FOR抛光底上方利用AND METHOD FOR制造半导体部件用氧化铈，CERIUMOXIDHALTIGES SCHLEIFMITTEL，METHOD
公开(公告)号：EP1201607A4
公开(公告)日：2004-04-14
申请号：EP00931580
申请日：2000-05-26
发明人： MATSUZAWA JUN , SUGIMOTO ATSUSHI , YOSHIDA MASATO , HIRAI KEIZOU , ASHIZAWA TORANOSUKE , OOTSUKI YUUTO
IPC分类号： B24B37/00 , C01F17/00 , C09K3/14 , H01L21/304
CPC分类号： B82Y30/00 , C01F17/0043 , C01P2002/60 , C01P2002/72 , C01P2004/64 , C01P2006/10 , C01P2006/14 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： A method for producing a cerium oxide, characterized as comprising heating a cerium salt at a high speed up to a burning temperature, followed by burning; a cerium oxide abrasive comprising a cerium oxide produced by the method and pure water; an abrasive containing a slurry comprising a medium and, dispersed therein, cerium oxide particles having, in a powder X-ray diffraction chart, an intensity ratio of the area of a primary peak appearing at 27 to 30° to that of a secondary peak appearing at 32 to 35° (primary peak/secondary peak) of 3.20 or more; an abrasive containing a slurry comprising a medium and, dispersed therein, cerium oxide particles having a bulk density of 6.5 g/cm3 or less; an abrasive containing a slurry comprising a medium and, dispersed therein, abrasive grains having pores; a method for polishing a substrate, characterized as comprising polishing a specific substrate using the above abrasive; and a method for manufacturing a semiconductor device, characterized as comprising a step of polishing with the above abrasive.
-
公开(公告)号：EP1796152A4
公开(公告)日：2008-12-03
申请号：EP05766424
申请日：2005-07-20
发明人： FUKASAWA MASATO , KOYAMA NAOYUKI , KURATA YASUSHI , HAGA KOUJI , AKUTSU TOSHIAKI , OOTSUKI YUUTO
IPC分类号： H01L21/3105 , B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry comprising cerium oxide particles, a dispersant, a water-soluble polymer and water, wherein the water-soluble polymer is a polymer obtained in polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator. The present invention provides a polishing slurry and a polishing method allowing polishing efficiently uniformly at high speed without scratch and also allowing easy process management in the CMP technology of smoothening an interlayer dielectric film, BPSG film, and insulation film for shallow trench isolation.
-
3.发明公开POLISHING AGENT FOR SILICON OXIDE, LIQUID ADDITIVE, AND METHOD OF POLISHING 审中-公开波兰语为氧化硅的液体添加剂及研磨方法
公开(公告)号：EP1956642A4
公开(公告)日：2011-04-06
申请号：EP06823259
申请日：2006-11-09
发明人： NISHIYAMA MASAYA , FUKASAWA MASATO , AKUTSU TOSHIAKI , ENOMOTO KAZUHIRO , ASHIZAWA TORANOSUKE , OOTSUKI YUUTO
IPC分类号： H01L21/3105 , B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
-
-
搜索结果
3 条记录 (耗时 0.009 秒)
