公开(公告)号：EP1201607A4

公开(公告)日：2004-04-14

申请号：EP00931580

申请日：2000-05-26

申请人： HITACHI CHEMICAL CO LTD

发明人： MATSUZAWA JUN ,  SUGIMOTO ATSUSHI ,  YOSHIDA MASATO ,  HIRAI KEIZOU ,  ASHIZAWA TORANOSUKE ,  OOTSUKI YUUTO

IPC分类号： B24B37/00 ,  C01F17/00 ,  C09K3/14 ,  H01L21/304

CPC分类号： B82Y30/00 ,  C01F17/0043 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2004/64 ,  C01P2006/10 ,  C01P2006/14 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

摘要： A method for producing a cerium oxide, characterized as comprising heating a cerium salt at a high speed up to a burning temperature, followed by burning; a cerium oxide abrasive comprising a cerium oxide produced by the method and pure water; an abrasive containing a slurry comprising a medium and, dispersed therein, cerium oxide particles having, in a powder X-ray diffraction chart, an intensity ratio of the area of a primary peak appearing at 27 to 30° to that of a secondary peak appearing at 32 to 35° (primary peak/secondary peak) of 3.20 or more; an abrasive containing a slurry comprising a medium and, dispersed therein, cerium oxide particles having a bulk density of 6.5 g/cm3 or less; an abrasive containing a slurry comprising a medium and, dispersed therein, abrasive grains having pores; a method for polishing a substrate, characterized as comprising polishing a specific substrate using the above abrasive; and a method for manufacturing a semiconductor device, characterized as comprising a step of polishing with the above abrasive.