公开(公告)号：EP3010045A1

公开(公告)日：2016-04-20

申请号：EP15189734.5

申请日：2015-10-14

申请人： Hitachi, Ltd. ,  Hitachi Power Semiconductor Device, Ltd.

发明人： HASEGAWA, Jiro ,  TOYOTA, Yoshiaki

IPC分类号： H01L29/861 ,  H01L21/329 ,  H01L29/06 ,  H01L29/24

CPC分类号： H01L21/02529 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02271 ,  H01L23/291 ,  H01L23/3192 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/8611

摘要： In a SiC semiconductor device, the surface of a termination region is covered with a passivation film, and the passivation film comprises a thermal silicon oxide film which is in contact with the surface of the termination region, a first CVD silicon oxide film deposited on the thermal silicon oxide film so as to be in contact with the thermal silicon oxide film, and a second CVD silicon oxide film deposed on the first CVD silicon oxide film so as to be in contact with the first CVD silicon oxide film. By so doing, an electric field applied to the passivation film is relaxed, while production cost is reduced.

摘要翻译： 在SiC半导体器件中，终端区域的表面被钝化膜覆盖，并且钝化膜包括与终端区域的表面接触的热氧化硅膜，沉积在第一CVD氧化硅膜上的第一CVD氧化硅膜 热氧化硅膜以与热氧化硅膜接触;以及第二CVD氧化硅膜，置于第一CVD氧化硅膜上以便与第一CVD氧化硅膜接触。 通过这样做，施加到钝化膜的电场被放松，同时生产成本降低。