公开(公告)号：EP4386829A2

公开(公告)日：2024-06-19

申请号：EP23207872.5

申请日：2023-11-06

申请人： STMicroelectronics International N.V.

发明人： BELLOCCHI, Gabriele ,  RASCUNA', Simone ,  PUGLISI, Valeria

IPC分类号： H01L23/31 ,  H01L23/29 ,  H01L23/00 ,  H01L29/16 ,  H01L29/872

CPC分类号： H01L23/3171 ,  H01L23/3192 ,  H01L23/291 ,  H01L23/3142 ,  H01L29/1608 ,  H01L23/562 ,  H01L29/872

摘要： Electronic device (50; 100; 110), comprising: a solid body (53, 58, 61) including a Silicon Carbide substrate, and further including an electrical terminal (58) of the electronic device on the substrate (53); a passivation layer (69) on the electrical terminal (58), of a first material; and a first adhesion improving layer (82; 102; 112) coupled to the passivation layer (69) and to the solid body (53), of a second material having predefined characteristics of adhesion to the first material, and configured to bond together the passivation layer (69) and the solid body (53).

公开(公告)号：EP3379578A1

公开(公告)日：2018-09-26

申请号：EP18153174.0

申请日：2018-01-24

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Infrastructure Systems & Solutions Corporation

发明人： Matsushita, Keiichi

IPC分类号： H01L29/423 ,  H01L29/778 ,  H01L23/29 ,  H01L29/20

CPC分类号： H01L29/66462 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/28264 ,  H01L21/31111 ,  H01L21/31144 ,  H01L23/291 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41775 ,  H01L29/42316 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/4983 ,  H01L29/518 ,  H01L29/7786 ,  H01L29/7787

摘要： A semiconductor device (1,2) includes a semiconductor layer (13) provided on a substrate (10), a drain electrode (30) and a source electrode (40) provided on the semiconductor layer, and a gate electrode (20) provided on the semiconductor layer such that an angle between a lateral surface and the semiconductor layer gradually decreases toward the semiconductor layer.

公开(公告)号：EP1531492A3

公开(公告)日：2018-07-11

申请号：EP04026606.6

申请日：2004-11-09

申请人： Stanley Electric Co., Ltd.

发明人： Tsuchiya, Masahiko ,  Horio, Naochika

IPC分类号： H01L23/492 ,  H01L23/31 ,  H01L23/485 ,  H01L21/56

CPC分类号： H01L24/81 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3157 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/02166 ,  H01L2224/0217 ,  H01L2224/02175 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/10156 ,  H01L2224/10165 ,  H01L2224/10175 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/16111 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/81139 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12035 ,  H01L2924/19041 ,  H01L2924/3841 ,  H05K3/28 ,  H05K3/4007 ,  H01L2924/00 ,  H01L2224/13 ,  H01L2224/9211 ,  H01L2224/81 ,  H01L2224/83

摘要： A confronting surface of a substrate (1) faces a first surface of a semiconductor element (30). Extension layers (4,5) are formed on the substrate at positions facing electrodes (36,37) on the semiconductor element (30). A levee film (14) is disposed on one of the confronting surface and the first surface. Openings (15,16) are formed through the levee film (14). Connection members (38,39) which is filled but is not completely filled in the openings (15,16) connect the electrodes (36,37) and the extension layers (4,5).

公开(公告)号：EP1494965B1

公开(公告)日：2017-09-06

申请号：EP03727305.9

申请日：2003-04-15

申请人： Schott AG

发明人： BIECK, Florian ,  LEIB, Jürgen ,  MUND, Dietrich

IPC分类号： B81C1/00

CPC分类号： C03B19/00 ,  B81C1/00269 ,  B81C2203/019 ,  B81C2203/031 ,  C03C4/12 ,  C03C14/006 ,  C03C15/00 ,  C03C17/02 ,  C03C17/34 ,  C03C2214/16 ,  C03C2217/21 ,  C03C2217/77 ,  C03C2218/15 ,  C03C2218/32 ,  C03C2218/328 ,  C03C2218/33 ,  C03C2218/355 ,  C23C14/10 ,  H01L21/02129 ,  H01L21/02145 ,  H01L21/02161 ,  H01L21/02266 ,  H01L21/31616 ,  H01L21/31625 ,  H01L21/50 ,  H01L21/56 ,  H01L23/10 ,  H01L23/291 ,  H01L23/3114 ,  H01L23/49894 ,  H01L51/5203 ,  H01L51/5246 ,  H01L51/5262 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/3011 ,  H05K3/28 ,  Y10T428/30 ,  Y10T428/31 ,  H01L2924/00

公开(公告)号：EP2933679B1

公开(公告)日：2017-02-01

申请号：EP15164032.3

申请日：2015-04-17

申请人： LG Display Co., Ltd.

发明人： Choi, SunHyun ,  Shin, KiTaeg ,  Jo, ChelHee ,  Roh, TaeYun

IPC分类号： G02F1/1345 ,  G02F1/1333

CPC分类号： H01L21/84 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/13458 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  H01L21/283 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32133 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669 ,  H01L2021/775 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides an array substrate (10) for a display device and a manufacturing method thereof. A transparent electrode pattern (570) is formed between a source/drain metal pattern (540) and a passivation layer (580) located above the source/drain metal pattern (540), which are formed in a passivation hole area (17) of a nonactive area (12) of the array substrate (10). Accordingly, it is possible to prevent display failure caused by a delamination phenomenon or peel-off of the material of the passivation layer (580) due to the lack of adhesion strength between the metal layer (540) and the passivation layer (580) in the passivation holes (600) in the passivation hole area (17).

公开(公告)号：EP2960936A4

公开(公告)日：2016-10-19

申请号：EP13875898

申请日：2013-02-22

申请人： HITACHI LTD

发明人： TSUYUNO NOBUTAKE ,  HOZOJI HIROSHI ,  NAITO TAKASHI ,  KODAMA MOTOMUNE ,  MIYAGI MASANORI ,  AOYAGI TAKUYA

IPC分类号： H01L23/29 ,  H01L23/053 ,  H01L23/24 ,  H01L23/28 ,  H01L23/31 ,  H01L25/07 ,  H01L25/16

CPC分类号： H01L23/291 ,  H01L23/053 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/564 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/49 ,  H01L25/072 ,  H01L25/16 ,  H01L2224/37124 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8389 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2224/8489 ,  H01L2224/8592 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention is intended to increase the moisture resistance of a resin-sealed electronic control device. The resin-sealed electronic control device includes: a semiconductor chip (2); a chip capacitor (3); a chip resistor (4); a bonding member (5); a substrate (6); a case (7); a heat radiating plate (8); a glass coating (9); and a first sealing material (10). The glass coating (9) directly covers the electronic circuit formed by the element group including: the semiconductor chip (2); the chip capacitor (3); and the chip resistor (4), the bonding member (5) and the substrate (6), and is sealed by the first sealing material (10). By being water impermeable, the glass coating (9) prevents water absorption in the vicinity of the element group, and can prevent an increase in the leak current of the semiconductor chip (2) due to water absorption, and an insulation performance drop such as lowered insulation resistance caused by migration within the element group.

公开(公告)号：EP2481088A4

公开(公告)日：2016-03-30

申请号：EP10819454

申请日：2010-09-23

申请人： CRYSTALPLEX CORP

发明人： QU LIANHUA ,  MILLER GREGORY

IPC分类号： G01N33/58 ,  B82B1/00 ,  C09K11/08 ,  H01L21/02 ,  H01L29/06 ,  H01L29/12 ,  H01L29/22 ,  H01L29/221 ,  H01L33/44

CPC分类号： G01N33/588 ,  A61K9/14 ,  A61K9/5115 ,  A61K9/5192 ,  A61K47/6923 ,  A61K49/0093 ,  B82Y5/00 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  G01N33/533 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/02406 ,  H01L21/02409 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02664 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/2203 ,  H01L29/221 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/906 ,  Y10S977/915 ,  Y10S977/927 ,  H01L2924/00

摘要： Passivated semiconductor nanoparticles and methods for the fabrication and use of passivated semiconductor nanoparticles is provided herein.

公开(公告)号：EP2960936A1

公开(公告)日：2015-12-30

申请号：EP13875898.2

申请日：2013-02-22

申请人： Hitachi, Ltd.

发明人： TSUYUNO Nobutake ,  HOZOJI Hiroshi ,  NAITO Takashi ,  KODAMA Motomune ,  MIYAGI Masanori ,  AOYAGI Takuya

IPC分类号： H01L23/29 ,  H01L23/28 ,  H01L23/31

CPC分类号： H01L23/291 ,  H01L23/053 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/564 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L25/16 ,  H01L2224/37124 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8389 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2224/8489 ,  H01L2224/8592 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention is intended to increase the moisture resistance of a resin-sealed electronic control device. The resin-sealed electronic control device includes: a semiconductor chip (2); a chip capacitor (3); a chip resistor (4); a bonding member (5); a substrate (6); a case (7); a heat radiating plate (8); a glass coating (9); and a first sealing material (10). The glass coating (9) directly covers the electronic circuit formed by the element group including: the semiconductor chip (2); the chip capacitor (3); and the chip resistor (4), the bonding member (5) and the substrate (6), and is sealed by the first sealing material (10). By being water impermeable, the glass coating (9) prevents water absorption in the vicinity of the element group, and can prevent an increase in the leak current of the semiconductor chip (2) due to water absorption, and an insulation performance drop such as lowered insulation resistance caused by migration within the element group.

摘要翻译： 本发明旨在增加树脂密封电子控制装置的耐湿性。 树脂密封电子控制装置包括：半导体芯片（2）; 芯片电容器（3）; 芯片电阻（4）; 接合部件（5）; 衬底（6）; 情况（7）; 散热板（8）; 玻璃涂层（9）; 和第一密封材料（10）。 玻璃涂层（9）直接覆盖由元件组成的电子电路，包括：半导体芯片（2）; 芯片电容器（3）; 和片状电阻器（4），接合部件（5）和基板（6），并被第一密封材料（10）密封。 通过不透水，玻璃涂层（9）防止元件组附近的吸水，并且可以防止由于吸水引起的半导体芯片（2）的泄漏电流的增加，以及绝缘性能下降，例如 降低元件组内迁移引起的绝缘电阻。

公开(公告)号：EP2922979A1

公开(公告)日：2015-09-30

申请号：EP14757288.7

申请日：2014-02-26

申请人： Lotus Applied Technology, LLC ,  Toppan Printing Co., Ltd.

发明人： DICKEY, Eric R. ,  DANFORTH, Bryan Larson

IPC分类号： C23C16/00 ,  C23C16/44

CPC分类号： H01L51/5253 ,  C23C16/401 ,  C23C16/45531 ,  H01L23/291 ,  H01L23/564 ,  H01L27/32 ,  H01L2251/303 ,  H01L2251/558 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method (600) of forming a thin barrier film (200) of a mixed metal-silicon- oxide is disclosed. For example, a method of forming an aluminum-silicon-oxide mixture having a refractive index of 1.8 or less comprises exposing a substrate (210) to sequences of a non-hydroxylated silicon-containing precursor, activated oxygen species, and metal-containing precursor until a mixed metal-silicon-oxide film having a thickness of 500 Angstroms or less is formed on the substrate.

摘要翻译： 公开了形成混合金属 - 氧化硅薄膜的薄膜的方法。 例如，形成折射率为1.8以下的铝 - 硅氧化物混合物的方法包括将底物暴露于非羟基化的含硅前体，活性氧和含金属的前体的序列，直到混合 在基板上形成厚度为500以下的金属 - 氧化硅膜。

公开(公告)号：EP2873091A1

公开(公告)日：2015-05-20

申请号：EP13819215.8

申请日：2013-07-02

申请人： Micron Technology, Inc.

发明人： FAY, Owen R. ,  ENGLAND, Luke G. ,  GAMBEE, Christopher J.

IPC分类号： H01L21/28 ,  H01L21/768

CPC分类号： H01L24/14 ,  H01L21/0274 ,  H01L21/311 ,  H01L21/56 ,  H01L23/291 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/73204 ,  H01L2224/81011 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/35121 ,  H01L2924/365 ,  H01L2924/3651 ,  H01L2924/381 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/206 ,  H01L2224/05552 ,  H01L2224/11

摘要： Methods of fabricating interconnect structures for semiconductor dice comprise forming conductive elements in contact with bond pads on an active surface over a full pillar diameter of the conductive elements, followed by application of a photodefinable material comprising a photoresist to the active surface and over the conductive elements. The polyimide material is selectively exposed and developed to remove photodefinable material covering at least tops of the conductive elements. Semiconductor dice and semiconductor die assemblies are also disclosed.